AP18T10GH

AP18T10GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 100V 160mΩ 9A S Description G Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP18T10GJ) are available for low-profile applications. D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 100 +20 9 5.6 30 28 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 4.5 62.5 110 Units ℃/W ℃/W ℃/W Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 1 200903052 AP18T10GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=80V, VGS=0V VGS=+20V, VDS=0V ID=5A VDS=80V VGS=10V VDS=50V ID=5A RG=3.3Ω,VGS=10V RD=10Ω VGS=0V VDS=25V f=1.0MHz Min. 100 1 - Typ. 5.6 10 2.5 4.5 6.5 10 13 3.4 425 55 33 Max. Units 160 3 25 250 +100 16 680 V mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Drain-Source Leakage Current (T j=125 C) VDS=80V ,VGS=0V Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=5A, VGS=0V IS=5A, VGS=0V dI/dt=100A/µs Min. - Typ. 53 130 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP18T10GH/J 20 20 T C = 25 o C 16 10 V 7 .0 V ID , Drain Current (A) 16 T C = 150 o C ID , Drain Current (A) 10 V 9.0 V 8.0V 7.0V 12 12 6.0 V 8 8 5.0 V 4 V G = 5.0 V 4 VG=4.5V 0 0 2 4 6 8 0 0 4 8 12 16 20 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 280 2.4 I D =5A T C =25 o C 2.0 240 I D =5A V G =10V Normalized RDS(ON) 4 5 6 7 8 9 10 RDS(ON) (mΩ) 1.6 200 1.2 160 0.8 120 0.4 -50 0 50 100 150 V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3.0 10 8 2.6 IS(A) 6 T j =150 o C T j =25 o C VGS(th) (V) 1.4 2.2 4 1.8 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP18T10GH/J 12 1000 f=1.0MHz ID=5A 10 C iss VGS , Gate to Source Voltage (V) 8 V DS = 80 V 6 C (pF) 100 4 C oss C rss 2 0 0 2 4 6 8 10 12 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 ID (A) 10 0.2 100us 0.1 0.1 0.05 1ms 1 PDM t 0.02 T c =25 C Single Pulse 0.1 0.1 1 10 o 10ms 100ms DC 100 1000 T 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4