AP2030SD

AP2030SD Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching G2 S2 G1 S1 D2 D1 D1 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS(ON) ID D1 20V 60mΩ 2.6A -20V 80mΩ -2.3A D2 PDIP-8 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. G1 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 20 ±12 2.6 2.1 15 2 0.016 -55 to 150 -55 to 150 P-channel -20 ±12 -2.3 -1.8 -10 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W Data and specifications subject to change without notice 200728042 AP2030SD N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 20 0.5 - Typ. 0.037 Max. Units 60 90 1.2 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=2.6A VGS=2.5V, ID=1.8A 3.6 9 1 4 6.5 14 20 15 300 255 115 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150 C) o VDS=VGS, ID=250uA VDS=5V, ID=2.6A VDS=20V, VGS=0V VDS=16V, VGS=0V VGS=±12V ID=2.6A VDS=10V VGS=4.5V VDS=10V ID=1A RG=6Ω,VGS=4.5V RD=10Ω VGS=0V VDS=8V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.2V Tj=25℃, IS=1.7A, VGS=0V Min. - Typ. - Max. Units 1.7 1.2 A V Forward On Voltage 2 AP2030SD P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) o Drain-Source Leakage Current (T j=150 C) o Test Conditions VGS=0V, ID=250uA VGS=-4.5V, I D=-2.2A VGS=-2.5V, I D=-1.8A VDS=VGS, I D=-250uA VDS=-5V, ID=-2.2A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS=±12V ID=-2.2A VDS=-6V VGS=-4.5V VDS=-10V ID=-2.2A RG=6Ω,VGS=-4.5V RD=4.5Ω VGS=0V VDS=-15V f=1.0MHz Min. -20 -0.5 - Typ. -0.037 Max. 80 135 -1 -1 -25 ±100 10 25 50 30 - Units V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, I D=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss 2.7 11.5 3.2 1.5 940 440 130 Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=-1.2V Tj=25℃, I S=-1.8A, VGS=0V Min. - Typ. -0.75 Max. -1.7 -1.2 Units A V Forward On Voltage2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width