AP20N03GP

AP20N03GS/P Pb Free Plating Product Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 52mΩ 20A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP20N03GP) is available for low-profile applications. GD S TO-263(S) G D TO-220(P) S Units V V A A A W W/ ℃ ℃ ℃ Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 30 ±20 20 13 60 31 0.25 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.0 62 Units ℃/W ℃/W Data & specifications subject to change without notice 200419051-1/4 AP20N03GS/P Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.037 3 6.1 1.4 4 4.9 29 14.3 3.6 290 160 45 Max. Units 52 85 3 1 100 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=10A VGS=4.5V, ID=8A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250uA VDS=10V, ID=10A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=±20V ID=10A VDS=24V VGS=5V VDS=15V ID=20A RG=3.3Ω,VGS=10V RD=0.75Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. - Typ. - Max. Units 20 60 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25℃, IS=20A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width