AP20T03GH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 50mΩ 12.5A
Description
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP20T03GJ) is available for low-profile applications.
GD S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
Rating 30 ± 20 12.5 8 40 12.5 0.1 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 10 110 Unit ℃/W ℃/W
Data & specifications subject to change without notice
200107041
AP20T03GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 30 1 -
Typ. 0.02
Max. Units 50 80 3 1 25 ±100 7 430 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=8A VGS=4.5V, ID=5A
6 4 1.5 2.3 6 30 10 3 270 70 50
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
VDS=VGS, ID=250uA VDS=5V, ID=5A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS= ± 20V ID=10A VDS=24V VGS=4.5V VDS=15V ID=10A RG=3.3Ω,VGS=10V RD=1.5Ω VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol VSD Parameter Forward On Voltage
2
Test Conditions IS=5A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 16 9
Max. Units 1.3 V ns nC
trr
Qrr
Reverse Recovery Time2 Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area. 2.Pulse width
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