AP2304AN
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device
S SOT-23 G D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 117mΩ 2.5A
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications.
D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current3, VGS @ 10V Pulsed Drain Current
1
Rating 30 ±20 2.5 2 10 1.38 0.01 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 90
Unit ℃/W
Data and specifications subject to change without notice
200318041
AP2304AN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=250uA
Min. 30 1 -
Typ. 0.1 2 3 0.8 1.8 5 9 11 2 120 62 24 1.67
Max. Units 117 190 3 1 10 ±100 5 190 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Static Drain-Source On-Resistance
VGS=10V, ID=2.5A VGS=4.5V, ID=2A VDS=VGS, ID=250uA VDS=10V, ID=2.5A
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C)
o o
VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS=±20V ID=2.5A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3Ω,VGS=10V RD=15Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2 2
Test Conditions IS=1.2A, VGS=0V IS=2A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 24 23
Max. Units 1.2 V ns nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse width
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