AP2306GN

AP2306GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive ▼ Lower On-resistance D BVDSS 20V RDS(ON) 35mΩ ID ▼ Surface Mount Package ▼ RoHS Compliant 5.3A S SOT-23 Description D G AP2306 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The special design SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. G S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Parameter Symbol . Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage +12 V 3 ID@TA=25℃ Drain Current , VGS @ 4.5V 5.3 A ID@TA=70℃ 3 4.3 A 10 A 1.38 W Drain Current , VGS @ 4.5V 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 90 ℃/W 1 201410225 AP2306GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=250uA 20 - - V VGS=10V, ID=5.5A - - 30 mΩ VGS=4.5V, ID=5.3A - - 35 mΩ VGS=2.5V, ID=2.6A - - 50 mΩ 0.5 - 1.25 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=5V, ID=5.3A - 13 - S IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS= +12V, VDS=0V - - +100 nA ID=5.3A - 8.7 - nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=10V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3.6 - nC VDS=15V - 6 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 14 - ns td(off) Turn-off Delay Time RG=2Ω - 18.4 - ns tf Fall Time VGS=10V - 2.8 - ns Ciss Input Capacitance VGS=0V - 603 - pF Coss Output Capacitance VDS=15V - 144 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 111 - pF Rg Gate Resistance f=1.0MHz - 1.4 2.8 Ω Min. Typ. IS=1.2A, VGS=0V - - 1.2 V . Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=5A, VGS=0V, - 16.8 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 11 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 270℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2306GN-HF 50 80 5.0V o T A =150 o C 4.5V 4.0V 60 40 ID , Drain Current (A) ID , Drain Current (A) T A =25 C V G =2.5V 40 5.0V 4.5V 30 4.0V 20 V G =2.5V 20 10 0 0 0 1 2 3 4 5 6 7 0 V DS , Drain-to-Source Voltage (V) 2 3 4 5 6 7 8 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.8 100 I D =5.3A I D =5.3A 1.6 80 60 . Normalized RDS(ON) o T A =25 C RDS(ON) (mΩ) 1 V G =4.5V 1.4 1.2 1.0 40 0.8 20 0.6 1 3 5 7 9 11 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 100 1.6 1.4 10 1.2 T j =25 o C VGS(th)(V) IS (A) T j =150 o C 1 1 0.8 0.6 0.1 0.4 0.01 0.2 0 0.4 0.8 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2306GN-HF f=1.0MHz 1000 I D =5.3A C iss 10 V DS =10V 8 C (pF) VGS , Gate to Source Voltage (V) 12 6 C oss C rss 100 4 2 10 0 0 5 10 15 20 25 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 ID (A) 10 1ms 1 . 10ms 0.1 100ms 1s DC o T A =25 C Single Pulse 0.01 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.01 T Duty factor = t/T Peak Tj = PDM x Rthja + Ta 0.01 Single Pulse Rthja = 270℃/W 0.001 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance RD VDS TO THE D VDS OSCILLOSCOPE D TO THE OSCILLOSCOPE 0.5 x RATED VDS RG G 0.75x RATED V G S + 10 V VGS + S VGS - Fig 11. Switching Time Circuit 1~ 3 mA IG ID Fig 12. Gate Charge Circuit 4 AP2306GN-HF MARKING INFORMATION Part Number : N6 N6SS Date Code : SS SS:2004,2008,2012… SS:2003,2007,2011… SS:2002,2006,2010… SS:2001,2005,2009… . 5 ADVANCED POWER ELECTRONICS CORP. Package Outline : SOT-23 D D1 Millimeters SYMBOLS E1 E e D1 D1 A A2 NOM MAX A 0.90 1.08 1.25 A1 0.00 0.08 0.15 A2 0.08 0.17 0.25 D1 0.30 0.40 0.50 e 1.70 2.00 2.30 D 2.70 2.90 3.10 E 2.40 2.70 3.00 E1 1.40 1.60 1.80 M 0° 5° 10° L 0.30 0.45 0.60 1.All Dimension Are In Millimeters. M A1 MIN 2.Dimension Does Not Include Mold Protrusions. M 3.Does not Contain Dam Bar Dimension. L Draw No. M1-N3-G-v08-1 . SOT-23 SOT-23 FOOTPRINT： 0.7mm 1.2mm 1.5mm 1mm 1mm . 1.2mm 0.7mm ADVANCED POWER ELECTRONICS CORP. 1.2mm 0.7mm Draw No. M1-N3-G-v08-1 1