AP2308GEN

AP2308GEN Pb Free Plating Product Advanced Power Electronics Corp. ▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ 2KV ESD Capability D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S SOT-23 G 20V 600mΩ 1.2A Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1,2 3 3 Rating 20 ±6 1.2 1 5 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit ℃/W Data and specifications subject to change without notice 200809041 AP2308GEN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 20 0.5 - Typ. 0.1 1 1.2 0.4 0.3 17 36 76 73 37 17 13 Max. Units 600 850 1.2 1 10 ±10 2 60 V V/℃ mΩ mΩ V S uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=1.2A VGS=2.5V, ID=0.5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC) o VDS=VGS, ID=250uA VDS=5V, ID=1.2A VDS=20V, VGS=0V VDS=16V ,VGS=0V VGS=±6V ID=1.2A VDS=16V VGS=4.5V VDS=10V ID=1.2A RG=3.3Ω,VGS=5V RD=10Ω VGS=0V VDS=10V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=1.2A, VGS=0V Min. - Typ. - Max. Units 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width