AP2310GN-HF

AP2310GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 60V ▼ Small Package Outline RDS(ON) 90mΩ ▼ Surface Mount Device 3 ID ▼ Simple Drive Requirement D 3A S ▼ Halogen Free & RoHS Compliant Product SOT-23 G D Description AP2310 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The special design SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. G S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Parameter Symbol . Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +20 V 3 A 2.3 A 10 A 1.38 W ID@TA=25℃ ID@TA=70℃ 3 Drain Current , VGS @ 10V 3 Drain Current , VGS @ 10V 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 90 ℃/W 1 201410204 AP2310GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. 60 - - V VGS=10V, ID=3A - 70 90 mΩ VGS=4.5V, ID=2A - 90 120 mΩ V VGS=0V, ID=250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 1.55 3 gfs Forward Transconductance VDS=5V, ID=3A - 5 - S IDSS Drain-Source Leakage Current VDS=48V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=3A - 6 10 nC Qgs Gate-Source Charge VDS=48V - 1.6 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3 - nC td(on) Turn-on Delay Time VDS=30V - 6 - ns tr Rise Time ID=1A - 5 - ns td(off) Turn-off Delay Time RG=3.3Ω - 16 - ns tf Fall Time VGS=10V - 3 - ns Ciss Input Capacitance VGS=0V - 550 880 pF Coss Output Capacitance VDS=15V - 70 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Rg Gate Resistance f=1.0MHz - 1.1 2.2 Ω Min. Typ. . Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=1.2A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=3A, VGS=0V, - 25 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 26 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 270℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2310GN-HF 10 10 8 ID , Drain Current (A) ID , Drain Current (A) 8 10V 7.0V 5.0V 4.5V T A = 150 o C 10V 7.0V 5.0V 4.5V o T A =25 C 6 V G = 3.0 V 4 2 6 V G = 3.0 V 4 2 0 0 0 1 2 3 4 5 0 V DS , Drain-to-Source Voltage (V) 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 105 2.0 ID=2A 99 ID=3A V G =10V 1.8 o T A =25 C 93 . 87 Normalized RDS(ON) RDS(ON) (mΩ) 1.6 1.4 1.2 1.0 81 0.8 75 0.6 2 4 6 8 -50 10 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 3 Normalized VGS(th) 1.2 IS(A) 2 T j =150 o C T j =25 o C 1.0 0.8 1 0.6 0.4 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2310GN-HF 12 f=1.0MHz 1000 C iss V DS = 30 V V DS =38V V DS =48V 8 C (pF) VGS , Gate to Source Voltage (V) ID=3A 10 6 100 C oss C rss 4 2 0 10 0 3 6 9 12 1 15 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 10 ID (A) Operation in this area limited by RDS(ON) 100us 1 1ms . 10ms 0.1 0.01 100ms 1s DC o T A =25 C Single Pulse 0.001 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.01 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Single Pulse Rthja = 270℃/W 0.001 0.01 0.1 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP2310GN-HF MARKING INFORMATION Part Number : ND NDSS Date Code : SS SS:2004,2008,2012… SS:2003,2007,2011… SS:2002,2006,2010… SS:2001,2005,2009… . 5