AP2310GN

AP2310GN Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Package Outline D ▼ Surface Mount Device BVDSS 60V RDS(ON) 90mΩ ID 3A S SOT-23 Description G Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications. D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units 60 V ±20 V 3 3 A 3 2.3 A 10 A Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V 1,2 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 1.38 W Linear Derating Factor 0.01 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Value Unit 90 ℃/W 200910041 AP2310GN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 60 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.05 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3A - - 90 mΩ VGS=4.5V, ID=2A - - 120 mΩ VDS=VGS, ID=250uA 1 - 3 V VDS=5V, ID=3A - 5 - S Drain-Source Leakage Current (Tj=25 C) VDS=60V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=70oC) VDS=48V ,VGS=0V - - 25 uA Gate-Source Leakage VGS=±20V - - ±100 nA ID=3A - 6 10 nC VGS(th) Gate Threshold Voltage gfs Forward Transconductance o IDSS IGSS 2 VGS=0V, ID=250uA Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 1.6 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3 - nC VDS=30V - 6 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 5 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 16 - ns tf Fall Time RD=30Ω - 3 - ns Ciss Input Capacitance VGS=0V - 490 780 pF Coss Output Capacitance VDS=25V - 55 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 40 - pF Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=1.2A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=3A, VGS=0V, - 25 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 26 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width