AP2315GEN

AP2315GEN Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Small Package Outline ▼ Surface Mount Device S ▼ RoHS Compliant & Halogen Free SOT-23S BVDSS -30V RDS(ON) 1.25Ω ID - 840mA G D Description AP2315 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-23S package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G S o Absolute Maximum Ratings@Tj=25 C(unless otherwise specified) Symbol Parameter . Rating Units VDS Drain-Source Voltage - 30 V VGS Gate-Source Voltage +16 V -840 mA -670 mA -2.5 A 0.69 W ID@TA=25℃ ID@TA=70℃ 3 Drain Current , VGS @ 10V 3 Drain Current , VGS @ 10V 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter 3 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Unit 180 ℃/W 1 201411174AP AP2315GEN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=-250uA -30 - - V VGS=-10V, ID=-0.8A - - 1.25 Ω VGS=-4.5V, ID=-0.5A - - 2.4 Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-0.8A - 880 - mS IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA IGSS Gate-Source Leakage VGS=+16V, VDS=0V - - +30 uA Qg Total Gate Charge ID=-0.8A - 1 1.6 nC Qgs Gate-Source Charge VDS=-25V - 0.6 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 0.4 - nC td(on) Turn-on Delay Time VDS=-15V - 10 - ns tr Rise Time ID=-0.8A - 8 - ns td(off) Turn-off Delay Time RG=3.3Ω - 22 - ns tf Fall Time VGS=-10V - 17 - ns Ciss Input Capacitance VGS=0V - 30 50 pF Coss Output Capacitance VDS=-25V - 15 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 10 - pF Min. Typ. IS=-1.1A, VGS=0V - - -1.3 V . Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=-0.8A, VGS=0V, - 27 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 30 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board, t < 10s ; 400℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2315GEN 2.0 2.0 -10V -7.0V -10V TA=150oC -ID , Drain Current (A) -ID , Drain Current (A) T A =25 o C 1.5 -5.0V 1.0 -4.5V -7.0V 1.5 65mΩ 1.0 -5.0V -4.5V 0.5 0.5 V G = -3.0V V G = -3.0V 0.0 0.0 0 2 4 6 0 8 2 4 6 8 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.8 4.5 I D = -0.8A V GS = -10V I D = -0.5A o T A =25 C 1.6 2.5 . Normalized RDS(ON) RDS(ON) (mΩ ) 3.5 1.4 1.2 1.0 1.5 0.8 0.5 0.6 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 0.8 -IS(A) T j =150 o C Normalized VGS(th) 0.6 T j =25 o C 0.4 1.1 0.8 0.2 0.0 0.5 0 0.3 0.6 0.9 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.5 -50 0 50 100 T j , Junction Temperature ( 150 o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2315GEN f=1.0MHz 100 8 I D = -0.8A V DS = -25V 6 65mΩ C (pF) -VGS , Gate to Source Voltage (V) 10 C iss 4 2 C oss C rss 10 0 0 0.5 1 1.5 2 2.5 1 3 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Operation in this area limited by RDS(ON) 100us -ID (A) 1 . 1ms 10ms 0.1 100ms o T A =25 C Single Pulse 1s DC 1 10 Duty factor=0.5 0.2 0.1 PDM 0.1 t 0.05 T 0.02 Duty factor = t/T Peak Tj = PDM x Rthja + T a 0.01 Rthja = 400℃/W Single pulse 0.01 0.01 0.1 Normalized Thermal Response (Rthja) 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 1.0 VG V DS = -5V -ID , Drain Current (A) 0.8 T j =25 o C QG T j =150 o C -4.5V 0.6 QGS QGD 0.4 0.2 Charge Q 0.0 0 2 4 6 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4 AP2315GEN MARKING INFORMATION Part Number : NL NLSS Date Code : SS SS:2004,2008,2012… SS:2003,2007,2011… SS:2002,2006,2010… SS:2001,2005,2009… . 5