AP2320GN-S

AP2320GN Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Small Package Outline ▼ Surface Mount Device BVDSS 100V RDS(ON) 5Ω ID 0.25A S ▼ RoHS Compliant & Halogen-Free SOT-23S G D Description AP2320 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The special design SOT-23S package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. G S Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage +20 V 0.25 A 0.2 A 1 A 0.7 W ID@TA=25℃ ID@TA=70℃ 3 Drain Current , VGS @ 10V 3 Drain Current , VGS @ 10V 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 180 ℃/W 1 201411283AP AP2320GN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 100 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=0.25A - - 5 Ω VGS=4.5V, ID=0.2A - - 9 Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=0.2A - 0.2 - S IDSS Drain-Source Leakage Current VDS=100V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=0.4A - 2 3.2 nC Qgs Gate-Source Charge VDS=80V - 0.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 0.5 - nC td(on) Turn-on Delay Time VDS=50V - 3 - ns tr Rise Time ID=0.4A - 7 - ns td(off) Turn-off Delay Time RG=3.3Ω - 9.5 - ns tf Fall Time VGS=10V - 4.5 - ns Ciss Input Capacitance VGS=0V - 32 51 pF Coss Output Capacitance VDS=25V - 9.5 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 6 - pF Min. Typ. - - . Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage Test Conditions IS=0.4A, VGS=0V Max. Units 1.5 V trr Reverse Recovery Time IS=1A, VGS=0V, - 27 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 28 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 400℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2320GN 1 1 o ID , Drain Current (A) 0.8 T A = 150 C 0.8 ID , Drain Current (A) T A =25 C 0.6 V G = 4.0V 0.4 10V 9 .0V 8 .0V 7.0 V V G = 6 .0 V o 10V 7.0V 6.0V 5.0V 0.6 0.4 0.2 0.2 0 0 0 4 8 12 0 16 4 V DS , Drain-to-Source Voltage (V) 8 12 16 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 2.4 I D = 0.25 A V G =10V Normalized BVDSS 1 . Normalized RDS(ON) 2.0 1.1 1.6 1.2 0.9 0.8 0.8 0.4 -50 0 50 100 150 -50 0 50 100 150 T j , Junction Temperature ( o C) o T j , Junction Temperature ( C) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 1.4 10 I D =250uA T j =150 o C Normalized VGS(th) IS(A) 1.2 T j =25 o C 1 1.0 0.8 0.6 0.4 0.1 0 0.4 0.8 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.6 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2320GN f=1.0MHz 100 I D = 0.4 A V DS =80V 10 C iss 8 C (pF) VGS , Gate to Source Voltage (V) 12 6 C oss 10 C rss 4 2 0 1 0 1 2 1 3 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10 1 1 ID (A) Operation in this area limited by RDS(ON) 100us 1ms 10ms 0.1 . 100ms 1s 0.01 T A =25 o C Single Pulse DC 0.001 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 0.1 0.1 PDM t 0.05 T 0.02 Duty factor = t/T Peak Tj = PDM x Rthja + T a 0.01 Rthja = 400℃/W Single Pulse 0.01 0.1 1 10 100 1000 0.0001 0.001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP2320GN MARKING INFORMATION Part Number : NN NNSS Date Code : SS SS:2004,2008,2012… SS:2003,2007,2011… SS:2002,2006,2010… SS:2001,2005,2009… . 5