AP2322GN

AP2322GN RoHS-compliant Product Advanced Power Electronics Corp. ▼ Capable of 1.8V gate drive ▼ Simple Drive Requirement ▼ Surface mount package S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 90mΩ 2.5A Description SOT-23 G Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is widely used for commercial-industrial applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating 20 ±8 2.5 2.0 10 0.833 0.006 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 150 Unit ℃/W Data and specifications subject to change without notice 1 200801112 AP2322GN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 20 0.3 - Typ. 0.02 2 7 0.7 2.5 6 12 16 4 350 55 48 3.2 Max. Units 90 120 150 1 1 ±100 11 560 4.8 V V/℃ mΩ mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=1.6A VGS=2.5V, ID=1A VGS=1.8V, ID=0.3A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current VDS=VGS, ID=1mA VDS=5V, ID=2A VDS=20V, VGS=0V VGS=±8V ID=2.2A VDS=16V VGS=4.5V VDS=10V ID=1A RG=3.3Ω,VGS=5V RD=10Ω VGS=0V VDS=20V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=0.7A, VGS=0V IS=2A, VGS=0V, dI/dt=100A/µs Min. - Typ. 20 13 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board , t