AP2328GN-HF

AP2328GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V Gate Drive D ▼ Small Outline Package ▼ Surface Mount Device S ▼ Halogen Free & RoHS Compliant Product SOT-23 BVDSS 30V RDS(ON) 60mΩ ID 4A G D Description AP2328 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The special design SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. G S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Parameter Symbol Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +12 V 3 ID@TA=25℃ Drain Current , VGS @ 4.5V 4 A ID@TA=70℃ 3 3 A 16 A 1.38 W Drain Current , VGS @ 4.5V 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 90 ℃/W 1 201501212 AP2328GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. 30 - - V VGS=10V, ID=4A - - 55 mΩ VGS=4.5V, ID=3A - - 60 mΩ VGS=2.5V, ID=2A - - 90 mΩ 0.5 - 1.5 V VGS=0V, ID=250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=10V, ID=3A - 15 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+12V, VDS=0V - - +100 nA ID=3A - 6 9.6 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=15V - 0.7 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 2.5 - nC VDS=15V - 5.3 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 9.5 - ns td(off) Turn-off Delay Time RG=3.3Ω - 14.5 - ns tf Fall Time VGS=5V - 4 - ns Ciss Input Capacitance VGS=0V - 325 520 pF Coss Output Capacitance VDS=25V - 50 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 45 - pF Rg Gate Resistance f=1.0MHz - 2.1 - Ω Min. Typ. IS=1.2A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=3A, VGS=0V, - 15 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 8 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 270℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2328GN-HF 20 20 o 5.0V 4.5V 3.5V 3.0V V G = 2.5V 16 ID , Drain Current (A) 16 ID , Drain Current (A) o T A = 150 C 5.0V 4.5V 3.5V 3.0V T A = 25 C V G = 2.5V 12 8 12 8 4 4 0 0 0 1 2 3 4 5 0 1 V DS , Drain-to-Source Voltage (V) 2 3 4 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 80 2.0 I D =2A I D =3A V G =4.5V T A =25 o C 70 Normalized RDS(ON) RDS(ON) (mΩ) 1.6 60 50 1.2 0.8 40 30 0.4 0 2 4 6 8 -50 10 3.0 1.5 Normalized VGS(th) 2.0 IS(A) 100 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature 4.0 T j =150 o C 50 T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage 2.0 0 o V GS , Gate-to-Source Voltage (V) T j =25 o C 1.0 0.5 1.0 0.0 0.0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2328GN-HF f=1.0MHz 8 500 400 6 C iss C (pF) VGS , Gate to Source Voltage (V) I D =3A V DS =15V 4 300 200 2 100 C oss C rss 0 0 0 2 4 6 8 1 10 5 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 10 Operation in this area limited by RDS(ON) Normalized Thermal Response (Rthja) 100 ID (A) 9 V DS , Drain-to-Source Voltage (V) 100us 1 1ms 10ms 0.1 100ms 1s DC o T A =25 C Single Pulse 0.01 Duty factor=0.5 0.2 0.1 0.1 PDM t 0.05 T Duty factor = t/T Peak Tj = PDM x Rthja + T a 0.02 Rthja = 270℃/W 0.01 Single Pulse 0.01 0.01 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 90% 0.1 1 10 100 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Circuit 4 AP2328GN-HF MARKING INFORMATION Part Number : NZ NZSS Date Code : SS SS:2004,2008,2012,2016,2020... SS:2003,2007,2011,2015,2019... SS:2002,2006,2010,2014,2018... SS:2001,2005,2009,2013,2017... 5