AP2428GEY

AP2428GEY Pb Free Plating Product Advanced Power Electronics Corp. ▼ Capable of 2.5V gate drive ▼ Lower on-resistance ▼ Surface mount package ▼ RoHS compliant 2928-8 D2 D2 D1 D1 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G2 S2 G1 S1 30V 27mΩ 5.9A ID Description D1 D2 G2 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The 2928-8 J-lead package provides good on-resistance performance and space saving like TSOP-6. G1 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range 3 3 Rating 30 ±10 5.9 4.7 30 1.39 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit ℃/W Data and specifications subject to change without notice 201031051-1/4 AP2428GEY Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=4.5V, ID=5A VGS=4V, ID=5A VGS=2.5V, ID=3A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o Min. 30 0.3 - Typ. 14 11 1 4 8 10 24 7 610 210 75 2.2 Max. Units 27 28 36 1 1 10 ±30 18 980 3.3 V mΩ mΩ mΩ V S uA uA uA nC nC nC ns ns ns ns pF pF pF Ω VDS=VGS, ID=250uA VDS=5V, ID=5A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=±10V ID=5A VDS=25V VGS=4.5V VDS=15V ID=1A RG=3.3Ω,VGS=5V RD=15Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=1.1A, VGS=0V IS=5A, VGS=0V, dI/dt=100A/µs Min. - Typ. 24 15 Max. Units 1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width