AP2531GY

AP2531GY Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge Drive ▼ Low On-resistance ▼ Surface Mount Package ▼ RoHS Compliant SOT-26 S2 G1 S1 D1 G2 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS(ON) ID 16V 58mΩ 3.5A -16V 125mΩ -2.5A Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial applications. G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 16 ±8 3.5 2.8 10 1.14 0.01 -55 to 150 -55 to 150 P-channel -16 ±8 -2.5 -2 -10 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 110 Unit ℃/W Data and specifications subject to change without notice 200701051-1/7 AP2531GY N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 16 0.2 - Typ. 0.01 9 7 0.6 2 6 11 17 3 360 50 40 1.4 Max. Units 58 70 85 1 1 25 ±100 12 580 2 V V/℃ mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=3A VGS=2.5V, ID=2A VGS=1.8V, ID=1A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=5V, ID=3A VDS=16V, VGS=0V VDS=12V, VGS=0V VGS=±8V ID=3A VDS=10V VGS=4.5V VDS=10V ID=1A RG=3.3Ω,VGS=5V RD=10Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=0.9A, VGS=0V Min. - Typ. - Max. Units 1.3 V 2/7 AP2531GY P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Test Conditions VGS=0V, ID=-250uA VGS=-4.5V, ID=-2A VGS=-2.5V, ID=-1.6A VGS=-1.8V, ID=-1A Min. -16 -0.2 - Typ. 0.01 5 6 0.8 2 7 20 23 24 370 70 60 8 Max. 125 155 200 -1 -1 -25 ±100 10 600 12 Unit V V/℃ mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C) o o VDS=VGS, ID=-250uA VDS=-5V, ID=-2A VDS=-16V, VGS=0V VDS=-12V ,VGS=0V VGS=±8V ID=-2A VDS=-10V VGS=-4.5V VDS=-10V ID=-1A RG=3.3Ω,VGS=-5V RD=10Ω VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=-0.9A, VGS=0V Min. - Typ. - Max. -1.3 Unit V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width