AP25G45GEM

AP25G45GEM Pb Free Plating Product Advanced Power Electronics Corp. ▼ High Input Impedance ▼ High Pick Current Capability ▼ 4.5V Gate Drive ▼ Strobe Flash Applications C C C C N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR VCE ICP 450V 150A C G E G E SO-8 E E Absolute Maximum Ratings Symbol VCE VGE IGEP ICP PD@TC=25℃1 TSTG TJ Parameter Collector-Emitter Voltage Gate-Emitter Voltage Pulsed Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 450 ±6 ±8 150 2.5 -55 to 150 -55 to 150 Units V V V A W ℃ ℃ Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol IGES ICES VCE(sat) VGE(th) Qg Qge Qgc td(on) tr td(off) tf Cies Coes Cres RthJA 1 Parameter Gate-Emitter Leakage Current Collector-Emitter Leakage Current (Tj=25℃) Test Conditions VGE=± 6V, VCE=0V VCE=450V, VGE=0V VGE=4.5V, ICP=150A (Pulsed) Min. 0.35 - Typ. 6 64.5 7 30 11.5 24.5 150 3.3 2227 200 79 - Max. 10 10 8 1.2 50 Units uA uA V V nC nC nC ns ns ns µs pF pF pF ℃/W Collector-Emitter Saturation Voltage Gate Threshold Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE=VGE, IC=250uA IC=50A VCE=360V VGE=4.5V VCC=225V IC=50A RG=25Ω VGE=10V VGE=0V VCE=25V f=1.0MHz Thermal Resistance Junction-Ambient Notes: 1.Surface mounted on 1 in2 copper pad of FR4 board ; 125℃/W when mounted on Min. copper pad. Data and specifications subject to change without notice 200411031 AP25G45GEM 180 140 160 T A =25 C o 140 5.0V 4.5V 4.0V IC , Collector Current (A) 120 T A =150 C o 5.0V 4.5V 4.0V IC , Collector Current (A) 100 120 100 3.0V 80 3.0V 80 60 60 2.0V 40 20 40 2.0V 20 VG=1.0V 0 0 2 4 6 8 10 0 2 4 6 8 VG=1.0V 10 12 0 V CE , Collector-Emitter Voltage (V) V CE , Collector-Emitter Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 160 10 V CE =4.5V IC , Collector Current(A) 120 V GE =4.5V VCE(sat),Saturation Voltage(V) 8 I C =130A 80 25 ℃ 70 ℃ 125 ℃ T A =150 ℃ 6 I C =100A 4 40 I C =50A 2 0 0 0 1 2 3 4 5 6 0 20 40 60 80 100 120 140 160 V GE , Cate-Emitter Voltage (V) Junction Temperature ( o C) Fig 3. Collector Current v.s. Gate-Emitter Voltage 1.5 Fig 4. Collector- Emitter Saturation Voltage v.s. Junction Temperature 200 1.2 ICP, Peak Collector Current (A) 160 VGE(th) (V) 0.9 120 0.6 80 0.3 40 0 -50 0 50 100 150 0 0 1 2 3 4 5 6 7 Junction Temperature ( C ) o V GE , Gate-to-Emitter Voltage (V) Fig 5. Gate Threshold Voltage Fig 6. Minimum Gate Drive Area v.s. Junction Temperature AP25G45GEM 10000 f=1.0MHz 12 VGE , Gate -Emitter Voltage (V) 10 Cies Capacitance (pF) 1000 I CP =50A V CC =360V 8 6 Coes 100 4 Cres 2 10 0 1 5 9 13 17 21 25 29 0 30 60 90 120 150 V CE , Collector-Emitter Voltage (V) Q G , Gate Charge (nC) Fig 7. Typical Capacitance Characterisitics Fig 8. Gate Charge Waveform VCE RC TO THE OSCILLOSCOPE 90% CV CE RG G 225 V E + 10% VGE V GE - 5V td(on) tr td(off) tf Fig 9. Switching Time Test Circuit Fig 10. Switching Time Waveform VCE C G TO THE OSCILLOSCOPE Flasher Vtrig CM + _ VCM 300V V GE RG IGBT VG E + - 1~3mA I G IC VCM = 300V CM =100uF ICP = 150A VG =5V Fig 11. Gate Charge Test Circuit Fig 12. Application Test Circuit