AP2623Y

AP2623Y Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Low On-resistance ▼ Surface Mount Package G1 S1 G2 D1 P-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 BVDSS RDS(ON) ID -30V 170mΩ - 2A S2 Description D2 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial applications. S1 D1 G2 S2 G1 SOT-26 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 ±20 -2 -1.6 -20 1.2 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 110 Unit ℃/W Data and specifications subject to change without notice 200614041 AP2623Y Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -30 -1 - Typ. -0.02 2 2.8 0.5 1.4 5 6 15 3 150 42 32 Max. Units 170 280 -3 -1 -25 ±100 4.5 240 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-2A VGS=-4.5V, ID=-1.6A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=-250uA VDS=-5V, ID=-2A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= ±20V ID=-2A VDS=-24V VGS=-4.5V VDS=-15V ID=-1A RG=3.3Ω,VGS=-10V RD=15Ω VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-1A, VGS=0V IS=-2A, VGS=0V, dI/dt=100A/µs Min. - Typ. 20 13 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width