AP2P053N

AP2P053N Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -20V ▼ Small Package Outline RDS(ON) 65mΩ ▼ Surface Mount Device 3 ID ▼ Capable of 2.5V Gate Drive D -4.2A S ▼ RoHS Compliant & Halogen-Free SOT-23S G D Description AP2P053 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SOT-23S package is widely preferred for commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. G S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter . Rating Units VDS Drain-Source Voltage - 20 V VGS Gate-Source Voltage +12 V 3 ID@TA=25℃ Drain Current , VGS @ 4.5V -4.2 A ID@TA=70℃ 3 -3.4 A -16 A 1.25 W Drain Current , VGS @ 4.5V 1 IDM Pulsed Drain Current 3 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 100 ℃/W 1 201611151 AP2P053N Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=-250uA -20 - - V VGS=-10V, ID=-4.5A - - 53 mΩ VGS=-4.5V, ID=-4A - - 65 mΩ VGS=-2.5V, ID=-2A - - 100 mΩ -0.5 - -1.2 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA gfs Forward Transconductance VDS=-5V, ID=-3A - 9 - S IDSS Drain-Source Leakage Current VDS=-16V, VGS=0V - - -10 uA IGSS Gate-Source Leakage VGS= +12V, VDS=0V - - +100 nA Qg Total Gate Charge ID=-3A - 10 16 nC Qgs Gate-Source Charge VDS=-10V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 2 - nC td(on) Turn-on Delay Time VDS=-10V - 8 - ns tr Rise Time ID=-1A - 12 - ns td(off) Turn-off Delay Time RG=3.3Ω - 24 - ns tf Fall Time VGS=-5V - 38 - ns Ciss Input Capacitance VGS=0V - 1000 1600 pF Coss Output Capacitance VDS=-10V - 120 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 90 - pF Min. Typ. . Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=-1A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=-3A, VGS=0V, - 12 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 4 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 300℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2P053N 12 20 -5.0V -4.5V -3.5V -3.0V -2.5V -ID , Drain Current (A) 16 T A = 150 o C 12 V G = -2.0V 8 -5.0V -4.5V -3.5V -3.0V -2.5V 65mΩV G = -2.0V 10 -ID , Drain Current (A) T A =25 o C 8 6 4 4 2 0 0 0 2 4 6 8 10 0 1 2 3 4 5 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2 I D = -4A V GS = -4.5V I D = -2A T A =25 o C 90 80 70 . Normalized RDS(ON) RDS(ON) (mΩ ) 1.6 1.2 0.8 60 0.4 50 0 40 1 2 3 4 -100 5 -V GS , Gate-to-Source Voltage (V) -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 8 2 I D = -250uA 1.6 -IS(A) T j =150 o C Normalized VGS(th) 6 T j =25 o C 4 1.2 0.8 2 0.4 2.01E+08 0 0 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -100 -50 0 50 T j , Junction Temperature ( 100 o 150 C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2P053N f=1.0MHz 8 1600 1200 6 65mΩ C (pF) -VGS , Gate to Source Voltage (V) I D = -3A V DS = -10V 4 800 2 400 C iss C oss C rss 0 0 0 4 8 12 16 1 20 5 9 13 17 21 25 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 -ID (A) 10 Operation in this area limited by RDS(ON) 100us 1ms 1 . 10ms 100ms 1s DC 0.1 o T A =25 C Single Pulse 0.01 Normalized Thermal Response (Rthja) Duty Factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T Single Pulse 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 300℃/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 10 V DS = -5V T j =25 o C VG T j =150 o C -ID , Drain Current (A) 8 QG -4.5V 6 QGS QGD 4 2 Charge Q 0 0 0.5 1 1.5 2 2.5 3 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4 AP2P053N 1.6 400 o PD, Power Dissipation(W) T j =25 C RDS(ON) (mΩ) 300 200 100 -2.5V V GS = -4.5V 1.2 0.8 0.4 0 0 0 2 4 6 8 10 0 12 -I D , Drain Current (A) 50 100 150 o T A , Ambient Temperature( C) Fig 13. Typ. Drain-Source on State Resistance Fig 14. Total Power Dissipation . 5 AP2P053N MARKING INFORMATION Part Number : A19 A19SS Date Code : SS SS:2004,2008,2012,2016,2020... SS:2003,2007,2011,2015,2019... SS:2002,2006,2010,2014,2018... SS:2001,2005,2009,2013,2017... . 6