AP3310GHJ

AP3310GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ 2.5V Gate Drive Capability ▼ Fast Switching Characteristic G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 150mΩ -10A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. This device is suited for low voltage and lower power applications. G D S G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating - 20 ± 12 -10 -6.2 -24 15.6 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 8.0 110 Units ℃/W ℃/W Data and specifications subject to change without notice 201029074-1/4 AP3310GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=-250uA VGS=-4.5V, ID=-2.8A VGS=-2.5V, ID=-2.0A Min. Typ. Max. Units -20 -0.5 2.8 4.2 1.2 0.4 7 8 13 5 320 75 55 V 150 mΩ 250 mΩ -1 -25 V S uA uA nC nC nC ns ns ns ns pF pF pF VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=-250uA VDS=-5V, ID=-2.8A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS=±12V ID=-2.8A VDS=-6V VGS=-5V VDS=-6V ID=-1A RG=6Ω,VGS=-5V RD=6Ω VGS=0V VDS=-6V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 ±100 nA Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions Tj=25℃, IS=-10A, VGS=0V IS=-2.8A, VGS=0V, dI/dt=100A/µs Min. Typ. Max. Units 17 9 -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Maximum junction temperature. 2.Pulse test THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4 AP3310GH/J 20 20 T C =25 o C 16 -5.0V -4.5V 16 T C =150 o C -ID , Drain Current (A) -3.5V 12 -ID , Drain Current (A) -5.0V -4.5V 12 65mΩ -3.5V 8 -2.5V 8 -2.5V 4 4 V G = -2.0V V G = -2.0V 0 0 1 2 3 4 5 6 7 8 0 0 1 2 3 4 5 6 7 8 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 280 1.6 I D =-2A T C =25 o C 240 I D = -2.8A V GS = -4.5V 1.4 Normalized RDS(ON) RDS(ON) (Ω ) 200 1.2 160 1 120 0.8 80 0 2 4 6 8 10 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 5 4 1.2 Normalized -VGS(th) (V) 3 -IS(A) T j =150 o C T j =25 o C 1 2 0.8 1 0.6 2.01E+08 0 0 0.2 0.4 0.6 0.8 1 1.2 0.4 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP3310GH/J f=1.0MHz 12 1000 10 I D = -2.8A V DS = -6V Ciss -VGS , Gate to Source Voltage (V) 8 65mΩ C (pF) 100 6 4 Coss Crss 2 0 0 1 2 3 4 5 6 7 8 9 10 10 1 5 9 13 17 21 25 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) DUTY=0.5 10 100us 0.2 -ID (A) 0.1 0.1 0.05 PDM t T 0.02 1 1ms 10ms 100ms DC T C =25 o C Single Pulse 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + Single Pulse 0.1 0.1 1 10 100 0.01 0.00001 0.0001 0.001 0.01 0.1 1 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -5V QGS QGD 10% VGS td(on) tr Charge td(off) tf Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 D D1 SYMBOLS Millimeters MIN NOM MAX A2 A3 B1 D D1 E3 1.80 0.40 0.40 6.00 4.80 3.50 2.20 0.5 5.10 0.50 -0.35 2.30 0.50 0.70 6.50 5.35 4.00 2.63 0.85 5.70 1.10 2.30 0.50 2.80 0.60 1.00 7.00 5.90 4.50 3.05 1.20 6.30 1.80 -0.65 E2 E3 E1 F F1 E1 E2 e C B1 F1 F 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e e A2 R : 0.127~0.381 A3 (0.1mm C Part Marking Information & Packing : TO-252 Part Number Package Code meet Rohs requirement 3310GH LOGO YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence ADVANCED POWER ELECTRONICS CORP. D A Millimeters c1 SYMBOLS MIN NOM MAX Original D1 A E2 A1 B1 E1 E B2 Original Original 2.10 0.60 0.40 0.60 0.40 0.40 6.00 4.80 5.00 1.20 ---7.00 2.30 1.20 0.60 0.95 0.50 0.55 6.50 5.40 5.50 1.70 2.30 --- 2.50 1.80 0.80 1.25 0.65 0.70 7.00 5.90 6.00 2.20 ---16.70 c c1 D A1 B2 B1 F D1 E1 E2 e F 1.All Dimensions Are in Millimeters. c 2.Dimension Does Not Include Mold Protrusions. e e Part Marking Information & Packing : TO-251 Part Number meet Rohs requirement 3310GJ Package Code LOGO Date Code (YWWSSS) Y ：Last Digit Of The Year WW ：Week SSS ：Sequence YWWSSS