AP3N1R8MT

AP3N1R8MT Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Ultra Low On-resistance 30V RDS(ON) 1.89mΩ ID G ▼ RoHS Compliant & Halogen-Free BVDSS 4 165A S D Description AP3N1R8 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 5x6 package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink and lower profile. D D D S S S G PMPAK® 5x6 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ . Parameter Drain Current (Chip), VGS @ 10V Drain Current, VGS @ 10V 3 Drain Current, VGS @ 10V 3 4 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation PD@TA=25℃ Total Power Dissipation 5 Rating Units 30 V +20 V 165 A 40.6 A 32.5 A 300 A 83.3 W 5 W 28.8 mJ EAS Single Pulse Avalanche Energy TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice 3 Value Units 1.5 ℃/W 25 ℃/W 1 201603311 AP3N1R8MT Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=250uA 30 - - V VGS=10V, ID=20A - - 1.89 mΩ VGS=4.5V, ID=20A - - 3.6 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=20A - 120 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=20A - 38 60 nC Qgs Gate-Source Charge VDS=15V - 7 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 22 - nC td(on) Turn-on Delay Time VDS=15V - 14 - ns tr Rise Time ID=1A - 12 - ns td(off) Turn-off Delay Time RG=3.3Ω - 52 - ns tf Fall Time VGS=10V - 42 - ns Ciss Input Capacitance VGS=0V - 3030 4850 pF Coss Output Capacitance VDS=25V Crss Rg - 820 - pF Reverse Transfer Capacitance . f=1.0MHz - 420 - pF Gate Resistance f=1.0MHz - 1.3 2.6 Ω Min. Typ. IS=20A, VGS=0V - - 1.2 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=10A, VGS=0V, - 47 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 57 - nC Notes: 1.Pulse width limited by Max. junction temperature 2.Pulse test 2 o 3.Surface mounted on 1 in copper pad of FR4 board, t