AP3P3R0MT

AP3P3R0MT Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test ▼ Simple Drive Requirement D ▼ Ultra Low On-resistance BVDSS RDS(ON) ID4 -30V 3mΩ -125A G ▼ RoHS Compliant & Halogen-Free S D Description D AP3P3R0 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. ® The PMPAK 5x6 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. D D S S S G ® PMPAK 5x6 o Absolute Maximum Ratings@Tj=25 C(unless otherwise specified) VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ . Parameter Symbol Drain Current (Chip), VGS @ 10V 4 4 Drain Current, VGS @ 10V (Package Limited) 3 Drain Current , VGS @ 10V 3 Drain Current , VGS @ 10V 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation PD@TA=25℃ Total Power Dissipation 5 Rating Units -30 V +20 V -125 A -60 A -33.5 A -26.8 A -200 A 69.4 W 5 W 45 mJ EAS Single Pulse Avalanche Energy TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 1.8 ℃/W 25 ℃/W 1 201602251 AP3P3R0MT Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=-250uA -30 - - V VGS=-10V, ID=-20A - - 3 mΩ VGS=-4.5V, ID=-10A - - 4.5 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-5V, ID=-20A - 67 - S IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=-20A - 76 122 nC Qgs Gate-Source Charge VDS=-15V - 24 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 26 - nC td(on) Turn-on Delay Time VDS=-15V - 19 - ns tr Rise Time ID=-1A - 12 - ns td(off) Turn-off Delay Time RG=3.3Ω - 160 - ns tf Fall Time VGS=-10V - 74 - ns Ciss Input Capacitance VGS=0V - 9400 15040 pF Coss Output Capacitance VDS=-15V Crss Rg - 1230 - pF Reverse Transfer Capacitance . f=1.0MHz - 680 - pF Gate Resistance f=1.0MHz - 3 6 Ω Min. Typ. IS=-20A, VGS=0V - - -1.2 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=-20A, VGS=0V, - 36 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 30 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board, t