AP40P03GH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant G S D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 28mΩ -30A
Description
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP40P03GJ) is available for low-profile applications.
G D S GD S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating -30 ±20 -30 -18 -120 31.3 0.25 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4 110 Units ℃/W ℃/W
Data and specifications subject to change without notice
201109063-1/4
AP40P03GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=-250uA
2
Min. -30 -1 -
Typ. -0.02 20 14 3 9 12 56 30 57 915 280 195
Max. Units 28 50 -3 -1 -25 ±100 22 1465 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-18A VGS=-4.5V, ID=-10A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150 C)
o
VDS=VGS, ID=-250uA VDS=-10V, ID=-18A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= ±20V ID=-18A VDS=-24V VGS=-4.5V VDS=-15V ID=-18A RG=3.3Ω,VGS=-10V RD=0.8Ω VGS=0V VDS=-25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2 2
Test Conditions IS=-18A, VGS=0V IS=-18A, VGS=0V, dI/dt=-100A/µs
Min. -
Typ. 30 21
Max. Units -1.2 V ns nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area. 2.Pulse width
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