AP40T03GJ

AP40T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 25mΩ 28A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP40T03GJ) are available for low-profile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 +25 28 24 95 31.25 0.25 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 4 62.5 110 Units ℃/W ℃/W ℃/W Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 1 200807183 AP40T03GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.032 Max. Units 25 45 3 1 25 +100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VGS=10V, ID=18A VGS=4.5V, ID=14A VDS=VGS, ID=250uA VDS=10V, ID=18A VDS=30V, VGS=0V 15 8.8 2.5 5.8 6 62 16 4.4 655 145 95 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (T j=150 C) o VDS=24V ,VGS=0V VGS= +25V ID=18A VDS=20V VGS=4.5V VDS=15V ID=18A RG=3.3Ω,VGS=10V RD=0.83Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. - Typ. - Max. Units 28 95 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25℃, IS=28A, VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP40T03GH/J 90 75 T C =25 C ID , Drain Current (A) o 10V 8 .0V ID , Drain Current (A) T C =150 C o 10V 8 .0V 60 6 .0V 50 6 .0V 30 25 V G = 4. 0V V G =4.0V 0 0.0 1.0 2.0 3.0 4.0 0 0.0 1.0 2.0 3.0 4.0 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 70 2.0 I D =14A T C =25 ℃ Normalized RDS(ON) 50 1.4 I D =18A V G =10V RDS(ON) (mΩ) 30 0.8 10 0 5 10 15 0.2 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 100 2.0 10 T j =150 o C IS(A) T j =25 o C VGS(th) (V) 1.5 1 1.0 0.1 0 0.4 0.8 1.2 1.6 0.5 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C ) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP40T03GH/J 12 f=1.0MHz 1000 I D =18A VGS , Gate to Source Voltage (V) 9 C iss V DS =10V V DS =15V V DS =20V C (pF) 6 100 C oss C rss 3 0 0 3 6 9 12 10 1 8 15 22 29 Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor = 0.5 Normalized Thermal Response (Rthjc) 0.2 ID (A) 100us 10 0.1 0.1 0.05 0.02 0.01 Single Pulse PDM 1ms T C =25 o C Single Pulse 1 0.1 1 10 100 t T Duty Factor = t/T Peak Tj = PDM x Rthjc + T C 10ms 100ms DC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 D D1 SYMBOLS Millimeters MIN NOM MAX A2 A3 B1 D D1 E3 1.80 0.40 0.40 6.00 4.80 3.50 2.20 0.5 5.10 0.50 -0.35 2.30 0.50 0.70 6.50 5.35 4.00 2.63 0.85 5.70 1.10 2.30 0.50 2.80 0.60 1.00 7.00 5.90 4.50 3.05 1.20 6.30 1.80 -0.65 E2 E3 E1 F F1 E1 E2 e C B1 F1 F 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e e A2 R : 0.127~0.381 A3 (0.1mm C Part Marking Information & Packing : TO-252 Part Number Package Code meet Rohs requirement 40T03GH LOGO YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 5 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-251 D A Millimeters SYMBOLS c1 D1 A A1 B1 E1 E B2 MIN NOM MAX 2.20 0.90 0.50 0.60 0.40 0.40 6.40 5.20 6.70 5.40 ---5.88 2.30 1.20 0.69 0.87 0.50 0.50 6.60 5.35 7.00 5.80 2.30 6.84 2.40 1.50 0.88 1.14 0.60 0.60 6.80 5.50 7.30 6.20 ---7.80 c c1 D A1 B2 B1 F D1 E E1 e F 1.All Dimensions Are in Millimeters. c 2.Dimension Does Not Include Mold Protrusions. e e Part Marking Information & Packing : TO-251 Part Number 40T03GJ YWWSSS meet Rohs requirement for low voltage MOSFET only Package Code LOGO Date Code (YWWSSS) Y ：Last Digit Of The Year WW ：Week SSS ：Sequence 6