AP4511GH

AP4511GH Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Good Thermal Performance ▼ Fast Switching Performance S1 G1 D1/D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS(ON) ID 35V 30mΩ 15A -35V 48mΩ -12A S2 G2 Description TO-252-4L The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 35 ±20 15 9 50 10.4 0.083 -55 to 150 -55 to 150 P-channel -35 ±20 -12 -7 -50 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case 3 3 Value Max. Max. 12 110 Units ℃/W ℃/W Thermal Resistance Junction-ambient Data and specifications subject to change without notice 200222053 AP4511GH N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 35 1 - Typ. 0.03 13 11 3 6 12 7 22 6 830 150 110 1.1 Max. Units 30 40 3 1 25 ±100 18 1330 1.7 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Static Drain-Source On-Resistance 2 VGS=10V, ID=8A VGS=4.5V, ID=6A VDS=VGS, ID=250uA VDS=10V, ID=8A Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=35V, VGS=0V VDS=28V, VGS=0V VGS=±20V ID=8A VDS=28V VGS=4.5V VDS=18V ID=1A RG=3.3Ω,VGS=10V RD=18Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=8A, VGS=0V IS=8A, VGS=0V dI/dt=100A/µs Min. - Typ. 18 12 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge AP4511GH P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=150 C) o o Test Conditions VGS=0V, ID=-250uA 2 Min. -35 -1 - Typ. -0.03 10 10 2 6 10 6 26 7 690 165 130 5 Max. Units 48 70 -3 -1 -25 ±100 19 1100 7.5 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg VGS=-10V, ID=-6A VGS=-4.5V, ID=-4A VDS=VGS, ID=-250uA VDS=-10V, ID=-6A VDS=-35V, VGS=0V VDS=-28V, VGS=0V VGS=±20V ID=-6A VDS=-28V VGS=-4.5V VDS=-18V ID=-1A RG=3.3Ω,VGS=-10V RD=18Ω VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-6A, VGS=0V IS=-6A, VGS=0V dI/dt=-100A/µs Min. - Typ. 20 12 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width