AP4525GEH_08

AP4525GEH RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Good Thermal Performance ▼ Fast Switching Performance S1 G1 D1/D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID 40V 28mΩ 15A -40V 42mΩ -12A S2 G2 P-CH BVDSS TO-252-4L RDS(ON) ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D1 G1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating N-channel 40 ±16 15.0 12.0 50 10.4 0.083 -55 to 150 -55 to 150 P-channel -40 ±16 -12.0 -10.0 -50 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 12 110 Unit ℃/W ℃/W Data and specifications subject to change without notice 1 200809235 AP4525GEH N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 40 1 - Typ. 0.03 6 9 1.5 4 7 20 20 4 580 100 70 2 Max. Units 28 32 3 1 25 ±30 14 930 3 V V/℃ mΩ mΩ V S uA uA uA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A VGS=4.5V, ID=4A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=40V, VGS=0V VGS=±16V ID=6A VDS=20V VGS=4.5V VDS=20V ID=6A RG=3Ω,VGS=10V RD=3.3Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Drain-Source Leakage Current (T j=70 C) VDS=32V, VGS=0V Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=15A, VGS=0V IS=6A, VGS=0V dI/dt=100A/µs Min. - Typ. 20 15 Max. Units 1.8 V ns nC Reverse Recovery Time Reverse Recovery Charge 2 AP4525GEH P-CH Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Static Drain-Source On-Resistance Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-5A VGS=-4.5V, ID=-3A VDS=VGS, ID=-250uA VDS=-10V, ID=-5A VDS=-40V, VGS=0V o Min. -40 -0.8 - Typ. -0.03 5 9 2 5 8.5 15 27 25 770 165 115 6 Max. 42 60 -2.5 -1 -25 ±30 24 1230 9 Units V V/℃ mΩ mΩ V S uA uA uA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Drain-Source Leakage Current (Tj=70 C) VDS=-32V, VGS=0V VGS=±16V ID=-5A VDS=-20V VGS=-4.5V VDS=-20V ID=-5A RG=3Ω,VGS=-10V RD=4Ω VGS=0V VDS=-20V f=1.0MHz f=1.0MHz Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-12A, VGS=0V IS=-5A, VGS=0V dI/dt=-100A/µs Min. - Typ. 20 16 Max. -1.8 - Units V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width