AP4563GH

AP4563GH Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement D1/D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 40V 30mΩ 30A -40V 36mΩ -27A ▼ Good Thermal Performance ▼ Fast Switching Performance ▼ RoHS Compliant S1 G1 S2 P-CH G2 Description S1 TO-252-4L The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. G1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 40 ±20 30 19 100 39 0.31 -55 to 150 -55 to 150 P-channel -40 ±20 -27 -17 -100 -41.7 -0.34 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c (N-CH) Rthj-c (P-CH) Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-case 3 3 3 Value Max. Max. Max. 3.2 3 110 Units ℃/W ℃/W ℃/W Thermal Resistance Junction-ambient Data and specifications subject to change without notice 200617051-1/7 AP4563GH N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 40 1 - Typ. 0.04 22 10 4 5 10 5 23 7 170 95 1.8 Max. Units 30 40 3 1 25 ±100 16 2.7 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Static Drain-Source On-Resistance 2 VGS=10V, ID=20A VGS=4.5V, ID=15A VDS=VGS, ID=250uA VDS=10V, ID=20A Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=40V, VGS=0V VDS=32V, VGS=0V VGS=±20V ID=20A VDS=30V VGS=4.5V VDS=20V ID=1A RG=3.3Ω,VGS=10V RD=20Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1100 1760 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=20A, VGS=0V IS=20A, VGS=0V dI/dt=100A/µs Min. - Typ. 26 17 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge 2/7 AP4563GH P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=150 C) o o Test Conditions VGS=0V, ID=-250uA 2 Min. -40 -1 - Typ. -0.03 19 18 4 11 12 6 68 36 250 200 8.5 Max. Units 36 48 -3 -1 -25 ±100 30 13 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg VGS=-10V, ID=-18A VGS=-4.5V, ID=-13A VDS=VGS, ID=-250uA VDS=-10V, ID=-18A VDS=-40V, VGS=0V VDS=-32V, VGS=0V VGS=±20V ID=-18A VDS=-30V VGS=-4.5V VDS=-20V ID=-1A RG=3.3Ω,VGS=-10V RD=20Ω VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1570 2500 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=-18A, VGS=0V IS=-18A, VGS=0V dI/dt=-100A/µs Min. - Typ. 33 26 Max. Units -1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width