AP4569GM

AP4569GM Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Fast Switching Performance ▼ RoHS Compliant D1 D2 D1 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID G2 S2 G1 40V 36mΩ 5.8A -40V 68mΩ -4.3A P-CH BVDSS RDS(ON) ID SO-8 S1 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 40 ±20 5.8 4.7 20 2 0.016 -55 to 150 -55 to 150 P-channel -40 ±20 -4.3 -3.4 -20 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W Data and specifications subject to change without notice 200708052-1/7 AP4569GM N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=10mA Min. 40 1 - Typ. 0.03 6 6.2 2.5 3.2 9 8 18 3 490 95 70 1.3 Max. Units 36 60 3 1 25 ±100 12 780 2 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A VGS=4.5V, ID=3A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC) o VDS=VGS, ID=250uA VDS=5V, ID=5A VDS=32V, VGS=0V VDS=32V, VGS=0V VGS=±20V ID=5A VDS=30V VGS=4.5V VDS=20V ID=1A RG=3.3Ω,VGS=10V RD=20Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=1.5A, VGS=0V IS=5A, VGS=0V dI/dt=100A/µs Min. - Typ. 20 14 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge 2/7 AP4569GM P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C) o o Test Conditions VGS=0V, ID=-10mA 2 Min. -40 -1 - Typ. -0.03 4 7 1.6 4.2 9 8 24 5 450 100 72 6.5 Max. Units 68 100 -3 -1 -25 ±100 12 700 9.5 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg VGS=-10V, ID=-4A VGS=-4.5V, ID=-2A VDS=VGS, ID=-250uA VDS=-5V, ID=-4A VDS=-32V, VGS=0V VDS=-32V, VGS=0V VGS=±20V ID=-4A VDS=-30V VGS=-4.5V VDS=-20V ID=-1A RG=3.3Ω,VGS=-10V RD=20Ω VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=-1.5A, VGS=0V IS=-4A, VGS=0V dI/dt=-100A/µs Min. - Typ. 22 20 Max. Units -1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width