AP4800AGM

AP4800AGM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic D D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G S S S 30V 18mΩ 9.6A SO-8 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ±20 9.6 7.7 40 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 50 Unit ℃/W Data and specifications subject to change without notice 1 200712245 AP4800AGM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=9A VGS=4.5V, ID=7A VGS=4V, ID=4A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=70 C) o Min. 30 1 - Typ. 13 21 9 12 2 7 7 7 22 7 710 155 145 Max. Units 18 28 40 3 1 25 ±100 18 1350 V mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VDS=VGS, ID=250uA VDS=10V, ID=9A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=±20V ID=9A VDS=20V VGS=4.5V VDS=15V ID=1A RG=3.3Ω,VGS=10V RD=15Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=2.1A, VGS=0V IS=9A, VGS=0V, dI/dt=100A/µs Min. - Typ. 24 14 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t