AP60T03AH

AP60T03AH/J Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 12mΩ 45A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60T03AJ) are available for low-profile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 ±20 45 32 120 44 0.352 -55 to 175 -55 to 175 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.4 110 Units ℃/W ℃/W Data and specifications subject to change without notice 200909033 AP60T03AH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 2 Min. 30 1 - Typ. 0.03 25 11.6 3.9 7 8.8 57.5 18.5 6.4 1135 200 135 Max. Units 12 25 3 1 250 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance VGS=10V, ID=20A VGS=4.5V, ID=15A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance 2 o VDS=VGS, ID=250uA VDS=10V, ID=10A VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS= ±20V ID=20A VDS=24V VGS=4.5V VDS=15V ID=20A RG=3.3Ω,VGS=10V RD=0.75Ω VGS=0V VDS=25V f=1.0MHz o Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=175 C) Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=45A, VGS=0V IS=20A, VGS=0V, dI/dt=100A/µs Min. - Typ. 23.3 16 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width