AP65SL380DH

AP65SL380DH Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 650V ▼ Fast Switching Characteristic RDS(ON) 0.38Ω ▼ Simple Drive Requirement 3 ID ▼ 100% Rg & UIS Test D G ▼ RoHS Compliant & Halogen-Free 10A S Description AP65SL380D series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G D S TO-252(H) The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. . Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Parameter Symbol Rating Units VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage +20 V VGS Gate-Source Voltage, AC (f > 1Hz) ID@TC=25℃ ID@TC=100℃ +30 V 3 10 A 3 6.5 A Drain Current, VGS @ 10V Drain Current, VGS @ 10V 1 IDM Pulsed Drain Current 24 A dv/dt MOSFET dv/dt Ruggedness (VDS = 0 …400V ) 40 V/ns PD@TC=25℃ Total Power Dissipation 78.1 W 2 W 75 mJ 15 V/ns PD@TA=25℃ 6 Total Power Dissipation 4 Single Pulse Avalanche Energy EAS 5 dv/dt Peak Diode Recovery dv/dt TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case 6 Maximum Thermal Resistance, Junction-ambient (PCB mount) Value Units 1.6 ℃/W 62.5 ℃/W 1 201705221 AP65SL380DH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage 2 Min. Typ. Max. Units VGS=0V, ID=250uA 650 - - V VGS=10V, ID=3.2A - - 0.38 Ω RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance VDS=15V, ID=3.2A - 6 - S IDSS Drain-Source Leakage Current VDS=520V, VGS=0V - - 100 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +1 uA Qg Total Gate Charge ID=5A - 33 52.8 nC Qgs Gate-Source Charge VDS=480V - 8 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 14 - nC td(on) Turn-on Delay Time VDD=300V - 13 - ns tr Rise Time ID=5A - 11 - ns td(off) Turn-off Delay Time RG=3.3Ω - 33 - ns tf Fall Time VGS=10V - 8 - ns Ciss Input Capacitance VGS=0V - Coss Output Capacitance VDS=100V - 40 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 5 - pF Rg Gate Resistance f=1.0MHz - 3.3 6.6 Ω Min. Typ. . 1160 1860 pF Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=3.2A, VGS=0V - 0.8 - V trr Reverse Recovery Time IS=5A, VGS=0V - 120 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 710 - nC Notes: 1.Pulse width limited by max. junction temperature. 2.Pulse test 3.Limited by max. junction temperature. Maximum duty cycle D=0.75 4.Starting Tj=25oC , VDD=50V , L=150mH , RG=25Ω 5.ISD ≦ ID, VDD ≦ BVDSS, starting TJ = 25oC 6.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP65SL380DH 20 12 ID , Drain Current (A) 16 T C =150 C 10 ID , Drain Current (A) T C =25 C 10V 9.0V 8.0V 7.0V 6.0V o 10V 9.0V 8.0V 7.0V o 12 V G =6.0V 8 0.37Ω 8 6 V G =5.0V 4 4 2 0 0 0 4 8 12 16 20 0 8 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 24 32 Fig 2. Typical Output Characteristics 440 4 I D =3.2A V G =10V I D =3.2A o 400 380 . Normalized RDS(ON) T C =25 C 420 RDS(ON) (mΩ) 16 V DS , Drain-to-Source Voltage (V) 3 2 360 1 340 0 320 4 6 8 -100 10 -50 0 50 100 150 o V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( C ) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 10 I D =250uA 1.6 Normalized VGS(th) IS (A) 8 6 T j = 150 o C T j = 25 o C 4 1.2 0.8 0.4 2 0 0 0 0.2 0.4 0.6 0.8 1 V SD (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -100 -50 0 50 100 150 o T j , Junction Temperature ( C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP65SL380DH f=1.0MHz 12 10000 I D =5A V DS =480V 1000 C iss 0.37Ω 8 C (pF) VGS , Gate to Source Voltage (V) 10 6 100 C oss 4 10 C rss 2 0 1 0 8 16 24 32 40 0 200 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 600 800 Fig 8. Typical Capacitance Characteristics 1 10 Operation in this area limited by RDS(ON) 1 10us 100us 0.1 1ms 10ms 100ms DC 0.01 T C =25 o C Single Pulse 0.001 . Normalized Thermal Response (Rthjc) 100 ID (A) 400 V DS , Drain-to-Source Voltage (V) Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 PDM 0.01 t Single Pulse T Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 1 10 100 1000 0.00001 0.0001 0.001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 t , Pulse Width (s) Fig10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP65SL380DH 2000 100 o T j =25 C 80 PD, Power Dissipation(W) RDS(ON) (mΩ) 1600 1200 800 V GS =10V 60 40 20 400 0 0 0 2 4 6 8 10 0 12 I D , Drain Current (A) 50 100 150 o T C , Case Temperature( C) Fig 13. Typ. Drain-Source on State Resistance Fig 14. Total Power Dissipation . 5 AP65SL380DH MARKING INFORMATION Part Number 65SL380D YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence . 6