AP6679GH-HF

AP6679GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G ▼ RoHS Compliant BVDSS -30V RDS(ON) 9mΩ ID -75A S Description G The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GJ) is available for low-profile applications. D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage 3 Rating Units -30 V +20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V -75 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V -50 A -300 A 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 89 W Linear Derating Factor 0.71 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Parameter Maximum Thermal Resistance, Junction-case 4 Value Units 1.4 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 62.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data and specifications subject to change without notice 1 200812304 AP6679GH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-30A - - 9 mΩ VGS=-4.5V, ID=-24A - - 15 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-24A - 34 - S IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (T j=125 C) VDS=-24V, VGS=0V - - -250 uA Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=-16A - 42 67 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-24V - 6 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 25 - nC VDS=-15V - 11 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-16A - 35 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 58 - ns tf Fall Time RD=0.94Ω - 78 - ns Ciss Input Capacitance VGS=0V - 2870 4590 pF Coss Output Capacitance VDS=-25V - 960 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 740 - pF Min. Typ. IS=-24A, VGS=0V - - -1.2 V IS=-16A, VGS=0V, - 47 - ns dI/dt=-100A/µs - 43 - nC Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is -75A . 4.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP6679GH/J-HF 150 280 -ID , Drain Current (A) -ID , Drain Current (A) 200 -6.0V 160 -4.5V 120 -10V -8.0V T C =150 o C -10V -8.0V T C =25 o C 240 80 -6.0V 100 -4.5V 50 V G =-3.0V V G =-3.0V 40 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0.0 4 0.5 1.0 1.5 2.0 2.5 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.8 15 I D = -24A T C =25 ℃ I D = -30A V G = -10V 1.6 Normalized RDS(ON) RDS(ON) (mΩ ) 13 11 1.4 1.2 1.0 9 0.8 0.6 7 3 5 7 9 -50 11 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 30 2.2 1.8 T j =150 o C -VGS(th) (V) -IS(A) 20 T j =25 o C 1.4 10 1 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 T j , Junction Temperature ( 150 o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP6679GH/J-HF f=1.0MHz 7 10000 C iss 5 I D = -16A V DS = -24V 4 C (pF) -VGS , Gate to Source Voltage (V) 6 1000 C oss C rss 3 2 1 0 100 0 10 20 30 40 50 60 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 Normalized Thermal Response (Rthjc) 1 100us -ID (A) 100 1ms 10 10ms 100ms 1s DC o T C =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 Single Pulse 0.01 1 0.1 1 10 100 0.00001 0.0001 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 90% 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 D D1 E2 E3 B1 F1 e Millimeters SYMBOLS E1 MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 F 2.20 2.63 3.05 F1 0.50 0.85 1.20 E1 5.10 5.70 6.30 E2 0.50 1.10 1.80 e -- 2.30 -- C 0.35 0.50 0.65 F e 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. R : 0.127~0.381 A2 A3 (0.1mm C Part Marking Information & Packing : TO-252 Laser Marking Part Number 6679GH Package Code Meet Rohs requirement for low voltage MOSFET only LOGO YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence If last "S" is numerical letter : Rohs product If last "S" is English letter : HF & Rohs product 5 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-251 D Millimeters A SYMBOLS c1 D1 E2 E1 E A1 B2 F B1 c e MIN NOM MAX A 2.20 2.30 2.40 A1 0.90 1.20 1.50 B1 0.40 0.60 0.80 B2 0.60 0.85 1.05 c c1 0.40 0.50 0.60 0.40 0.50 0.60 D 6.40 6.60 6.80 D1 4.80 5.20 5.50 E 6.70 7.00 7.30 E1 5.40 5.60 5.80 E2 1.30 1.50 1.70 e ---- 2.30 ---- F 7.00 8.30 9.60 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-251 Part Number 6679GJ YWWSSS meet Rohs requirement for low voltage MOSFET only Package Code LOGO Date Code (YWWSSS) Y ：Last Digit Of The Year WW ：Week SSS ：Sequence If last "S" is numerical letter : Rohs product If last "S" is English letter : HF & Rohs product 6