AP6679GH

AP6679GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G ▼ RoHS Compliant BVDSS -30V RDS(ON) 9mΩ ID -75A S Description AP6679 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP6679GJ) are available for low-profile applications. G D S TO-252(H) G D S TO-251(J) o Absolute Maximum Ratings@Tj=25 C(unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ Drain Current, VGS @ 10V ID@TC=100℃ Drain Current, VGS @ 10V 3 1 Rating Units -30 V +20 V -75 A -50 A -300 A IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 89 W Linear Derating Factor 0.71 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Parameter Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 4 Value Units 1.4 ℃/W 62.5 ℃/W 110 ℃/W 1 201501065 AP6679GH/J-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=-250uA -30 - - V VGS=-10V, ID=-30A - - 9 mΩ VGS=-4.5V, ID=-24A - - 15 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-24A - 34 - S IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (T j=125 C) VDS=-24V, VGS=0V - - -250 uA Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=-16A - 42 67 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-24V - 6 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 25 - nC 2 td(on) Turn-on Delay Time VDS=-15V - 11 - ns tr Rise Time ID=-16A - 35 - ns td(off) Turn-off Delay Time RG=3.3Ω - 58 - ns tf Fall Time VGS=-10V - 78 - ns Ciss Input Capacitance VGS=0V - 2870 4590 pF Coss Output Capacitance VDS=-25V - 960 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 740 - pF Min. Typ. - - Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=-24A, VGS=0V 2 Max. Units -1.2 V trr Reverse Recovery Time IS=-16A, VGS=0V, - 47 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 43 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is -75A . 4.Surface mounted on 1 in 2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP6679GH/J-HF 150 280 -ID , Drain Current (A) -ID , Drain Current (A) 200 -6.0V 160 -4.5V 120 -10V -8.0V T C =150 o C -10V -8.0V T C =25 o C 240 80 -6.0V 100 -4.5V 50 V G =-3.0V V G =-3.0V 40 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0.0 0.5 1.0 1.5 2.0 2.5 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.8 15 I D = -24A T C =25 ℃ I D = -30A V G = -10V 1.6 Normalized RDS(ON) RDS(ON) (mΩ ) 13 11 1.4 1.2 1.0 9 0.8 0.6 7 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 30 2.2 1.8 T j =150 o C -VGS(th) (V) -IS(A) 20 T j =25 o C 1.4 10 1 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 T j , Junction Temperature ( 150 o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP6679GH/J-HF f=1.0MHz 7 10000 C iss 5 I D = -16A V DS = -24V 4 C (pF) -VGS , Gate to Source Voltage (V) 6 1000 C oss C rss 3 2 1 0 100 0 10 20 30 40 50 60 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 Normalized Thermal Response (Rthjc) 1 100us -ID (A) 100 1ms 10 10ms 100ms 1s DC o T C =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 Single Pulse 0.01 1 0.1 1 10 100 0.00001 0.0001 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 90% 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP6679GH/J-HF MARKING INFORMATION TO-251 6679GJ Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence TO-252 6679GH Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 5 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 Millimeters SYMBOLS D D1 E2 E1 F B2 e MAX A2 2.18 2.30 2.40 A3 0.40 0.50 0.65 B 0.40 0.70 1.00 B1 0.50 0.85 1.20 D 6.00 6.50 6.80 D1 4.80 5.35 5.90 4.00 (ref.) F 2.00 2.63 3.05 F1 0.50 0.85 1.20 E1 5.00 5.70 6.30 E2 0.50 1.10 1.80 e F1 B NOM E3 E3 B1 MIN e 2.3 (ref) C 0.35 0.525 0.70 A1 0.00 － 0.25 B2 － － 1.25 L 0.90 1.34 1.78 . A2 C A1 A3 L 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. 3. Thermal PAD, Body and Pin contour is for reference, it may has little difference by option. Draw No. M1-H3EFIMT-G-v10 TO-252 TO-252 FOOTPRINTΚ 6.8mm 7mm 2mm 4.6mm 3mm . 0.6mm 1.0mm ADVANCED POWER ELECTRONICS CORP.ʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳDraw No. M1-H3EFIMT-G-v10 1