AP70L02GP

AP70L02GS/P RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 9mΩ 66A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP70L02GP) is available for low-profile applications. G D GD S TO-263(S) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 S Rating 25 ±20 66 42 210 66 0.53 TO-220(P) Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Thermal Data Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.9 62 Unit ℃/W ℃/W Data & specifications subject to change without notice 200831073-1/6 AP70L02GS/P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 25 1 - Typ. 0.037 Max. Units 9 18 3 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=33A VGS=4.5V, ID=20A 25 23 3 17 8.8 95 24 14 790 475 195 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250uA VDS=10V, ID=33A VDS=25V, VGS=0V VDS=20V, VGS=0V VGS=± 20V ID=33A VDS=20V VGS=5V VDS=15V ID=33A RG=3.3Ω,VGS=10V RD=0.45Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.26V 1 Min. - Typ. - Max. Units 66 210 1.26 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25℃, IS=66A, VGS=0V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/6 AP70L02GS/P 250 140 T C =25 o C 200 V G =10V V G =8.0V 120 T C =150 o C V G =10V V G =8.0V V G =6.0V 100 ID , Drain Current (A) 150 ID , Drain Current (A) 80 V G =6.0V 100 V G =5.0V 60 V G =5.0V 50 40 V G =4.0V V G =4.0V 20 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 23 1.8 21 I D =10A T c =25 ℃ I D =10A 1.6 V G =10V 19 15 Normalized R DS(ON) 17 1.4 RDS(ON) (mΩ) 1.2 13 11 1 9 0.8 7 5 2 3 4 5 6 7 8 9 10 11 0.6 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3/6 AP70L02GS/P 80 80 70 70 60 60 ID , Drain Current (A) 50 50 PD (W) 25 50 75 100 125 150 40 40 30 30 20 20 10 10 0 0 0 50 100 150 T c , Case Temperature ( C) o T c ,Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 1000 1 DUTY=0.5 100 Normalized Thermal Response (R thjc) 0.2 10us ID (A) 0.1 0.05 0.02 0.01 SINGLE PULSE 0.1 100us 10 PDM t T Duty factor = t/T Peak Tj = P DM x Rthjc + TC 1ms T c =25 o C Single Pulse 10ms 100ms 1 1 10 100 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance 4/6 AP70L02GS/P 16 10000 f=1.0MHz 14 I D =33A V DS =20V VGS , Gate to Source Voltage (V) 12 10 8 C (pF) 1000 Ciss Coss 6 4 Crss 2 0 0 5 10 15 20 25 30 35 40 45 50 100 1 6 11 16 21 26 31 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 3 10 2 IS(A) T j =150 o C T j =25 o C 1 VGS(th) (V) 1 0 1.1 1.3 1.5 -50 0.1 0.1 0.3 0.5 0.7 0.9 0 50 100 150 V SD (V) T j , Junction Temperature( o C) Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature 5/6 AP70L02GS/P VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.6 x RATED VDS RG G + 10 V - S VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 5V D G VGS 0.8 x RATED VDS QGS QGD S + 1~ 3 mA IG ID Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform 6/6 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-263 E SYMBOLS Millimeters MIN NOM MAX A A1 A2 4.25 0.00 2.20 0.70 1.07 0.30 1.15 8.30 9.70 2.04 ----4.50 ----- 4.75 0.15 2.45 0.90 1.27 0.45 1.30 8.90 10.10 2.54 1.50 4.90 1.50 5.20 0.30 2.70 1.10 1.47 0.60 1.45 9.40 10.50 3.04 ----5.30 ---- D b b1 c c1 L2 b1 L3 b D E e L2 L3 L4 e L4 A A2 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. c1 cθ A1 Part Marking Information & Packing : TO-263 Part Number Package Code XXXXXS 70L02GS meet Rohs requirement YWWSSS LOGO Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E1 E φ L2 A SYMBOLS Millimeters MIN NOM MAX L1 A 4.25 0.65 1.15 0.40 1.00 9.70 -----12.70 2.60 1.00 2.6 14.70 6.30 3.50 8.40 4.48 0.80 1.38 0.50 1.20 10.00 --2.54 13.60 2.80 1.40 3.10 15.50 6.50 3.60 8.90 4.70 0.90 1.60 0.60 1.40 10.40 11.50 ---14.50 3.00 1.80 3.6 16 6.70 3.70 9.40 L5 c1 b b1 c c1 E E1 D L4 e L L1 L2 L3 L4 L5 L3 b1 L φ D b c 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-220 Part Number Package Code 70L02GP LOGO YWWSSS meet Rohs requirement Date Code (YWWSSS) Y ：Last Digit Of The Year WW ：Week SSS ：Sequence