AP83T03GH

AP83T03GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS 30V RDS(ON) 6mΩ ID G 75A S Description AP83T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and □ fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP83T03GJ) are available for low-profile applications. G G D D S S TO-252(H) TO-251(J) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Parameter Symbol . Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Drain Current, VGS @ 10V 75 A ID@TC=100℃ Drain Current, VGS @ 10V 53 A 240 A 60 W 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Rthj-c Parameter Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice 3 Value Units 2.5 ℃/W 62.5 ℃/W 110 ℃/W 1 201410163 AP83T03GH/J-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance 2 Test Conditions Min. Typ. Max. Units VGS=0V, ID=250uA 30 - - V VGS=10V, ID=40A - - 6 mΩ VGS=4.5V, ID=30A - - 11 mΩ V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 VDS=10V, ID=30A - 55 - S gfs Forward Transconductance IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=30A - 21 34 nC Qgs Gate-Source Charge VDS=24V - 3.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 15 - nC td(on) Turn-on Delay Time VDS=15V - 9.5 - ns tr Rise Time ID=30A - 86 - ns td(off) Turn-off Delay Time RG=3.3Ω - 24 - ns tf Fall Time VGS=10V - 14 - ns Ciss Input Capacitance VGS=0V - 1150 1840 pF Coss Output Capacitance VDS=25V Crss Rg - 340 - pF Reverse Transfer Capacitance . f=1.0MHz - 250 - pF Gate Resistance f=1.0MHz - 0.9 - Ω Min. Typ. IS=30A, VGS=0V - - 1.2 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=10A, VGS=0V, - 29 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 22 - nC Notes: 1.Pulse width limited by max. junction temperature 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP83T03GH/J-HF 200 120 10V 7.0V 6.0V 5.0V ID , Drain Current (A) 160 10V 7.0V 6.0V 5.0V o T C =175 C 100 ID , Drain Current (A) T C =25 o C 120 V G = 4.0V 80 V G =4.0V 80 60 40 40 20 0 0 0 4 8 12 16 0 2 V DS , Drain-to-Source Voltage (V) 4 6 8 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 9 I D =30A I D =40A V G =10V T C =25 o C 7 . 6 Normalized RDS(ON) RDS(ON) (mΩ) 8 1.6 1.2 0.8 5 0.4 4 2 4 6 8 -50 10 0 150 200 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 30 1.2 Normalized VGS(th) 40 IS(A) 100 T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage T j =175 o C 50 o V GS , Gate-to-Source Voltage (V) T j =25 o C 20 10 0.8 0.4 0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 200 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP83T03GH/J-HF f=1.0MHz 1600 I D =30A 8 V DS =15V V DS =18V V DS =24V 6 C iss 1200 C (pF) VGS , Gate to Source Voltage (V) 10 800 4 C oss C rss 400 2 0 0 0 10 20 30 40 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Operation in this area limited by RDS(ON) ID (A) 100 100us 10 1ms 10ms 100ms DC T C =25 o C Single Pulse . Normalized Thermal Response (Rthjc) 1000 Duty factor = 0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty Factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP83T03GH/J-HF MARKING INFORMATION TO-251 83T03GJ Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence TO-252 83T03GH Part Number meet Rohs requirement for low voltage MOSFET only . Package Code YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 5