AP85U03GMT

AP85U03GMT RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ SO-8 Compatible ▼ Low On-resistance G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 5mΩ 82A D D S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low□ on-resistance and cost-effectiveness. The GEMPAK package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink. S S S D D G GEMPAK Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 4 3 3 Rating 30 ±20 82 24 15 200 50 5 57.6 -55 to 150 -55 to 150 Units V V A A A A W W mJ ℃ ℃ Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient 3 Max. Max. Value 2.5 25 Units ℃/W ℃/W Data & specifications subject to change without notice 201008072-1/4 AP85U03GMT Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=20A VGS=4.5V, ID=20A Min. 30 1 - Typ. 19.5 29 6.4 19 10 84 27 83 395 390 1.2 Max. Units 5 10 3 1 ±100 46 1.8 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current VDS=VGS, ID=250uA VDS=10V, ID=20A VDS=24V, VGS=0V VGS=±20V ID=30A VDS=24V VGS=4.5V VDS=15V ID=30A RG=3.3Ω,VGS=10V RD=0.5Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 2400 3840 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=30A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs Min. - Typ. 33 30 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time2 Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t