AP8600S

AP8600S Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Ultra-low On-resistance ▼ Fast Switching Characteristic 80V RDS(ON) 5mΩ ID G ▼ RoHS Compliant & Halogen-Free BVDSS 4 105A S Description AP4604 series are from Advanced Power innovated design AP8600 and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263 TO-220 package is widely preferred for all commercialindustrial surface through mount hole applications applications.using The infrared low thermal reflow resistance and suited low package contribute to thedue worldwide technique and for highcost current application to the popular package. low connection resistance. G D S TO-263(S) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ Drain Current (Chip), VGS @ 10V ID@TC=25℃ Drain Current, VGS @ 10V ID@TC=100℃ Drain Current, VGS @ 10V 4 4 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation PD@TA=25℃ . Parameter Total Power Dissipation 3 5 Rating Units 80 V +20 V 105 A 80 A 67 A 320 A 104 W 3.125 W 28.8 mJ EAS Single Pulse Avalanche Energy TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice 3 Value Units 1.2 ℃/W 40 ℃/W 1 201601291 AP8600S Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage 2 Min. Typ. Max. Units VGS=0V, ID=250uA 80 - - V VGS=10V, ID=40A - - 5 mΩ RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance VDS=10V, ID=40A - 70 - S IDSS Drain-Source Leakage Current VDS=64V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= 20V, VDS=0V - - 300 nA Qg Total Gate Charge ID=40A - 74 118.4 nC Qgs Gate-Source Charge VDS=64V - 17 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 28 - nC td(on) Turn-on Delay Time VDS=40V - 16 - ns tr Rise Time ID=40A - 70 - ns td(off) Turn-off Delay Time RG=3.3Ω - 41 - ns tf Fall Time VGS=10V - 92 - ns Ciss Input Capacitance VGS=0V - 4100 6560 pF Coss Output Capacitance VDS=40V - 1570 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 60 - pF Rg Gate Resistance - 1.8 3.6 Ω Min. Typ. IS=40A, VGS=0V - - 1.3 V . f=1.0MHz Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=40A, VGS=0V, - 55 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 60 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board 4.Package limitation current is 80A. o 5.Starting Tj=25 C , VDD=40V , L=0.1mH , RG=25Ω THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP8600S 400 200 10V 9.0V 8.0V ID , Drain Current (A) T C =150 o C 300 7.0V 6.0V 200 10V 9.0V 8.0V 7.0V 6.0V 160 ID , Drain Current (A) o T C = 25 C V G =5.0V 120 V G =5.0V 80 100 40 0 0 0 4 8 12 16 20 0 Fig 1. Typical Output Characteristics 4 6 8 10 Fig 2. Typical Output Characteristics 19 2.0 I D =40A I D =40A V G =10V T C =25 o C 11 . Normalized RDS(ON) 1.6 15 RDS(ON) (mΩ) 2 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) 1.2 0.8 7 0.4 3 2 4 6 8 -100 10 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 100 I D =250uA 1.6 o T j =150 C T j =25 C IS(A) 10 Normalized VGS(th) o 1.2 0.8 1 0.4 0.1 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -100 -50 0 50 100 150 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP8600S f=1.0MHz 8000 I D =40A V DS =64V 10 6000 8 C (pF) VGS , Gate to Source Voltage (V) 12 6 4000 C iss 4 2000 2 C oss C rss 0 0 0 20 40 60 80 1 100 21 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 61 81 101 Fig 8. Typical Capacitance Characteristics 1000 Operation in this area limited by RDS(ON) 10 100us 1 1ms 10ms 100ms DC T C =25 o C Single Pulse 0.1 0.1 1 10 . Normalized Thermal Response (Rthjc) 1 100 ID (A) 41 V DS ,Drain-to-Source Voltage (V) Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 100 0.00001 0.0001 0.001 V DS , Drain-to-Source Voltage (V) 0.01 0.1 1 10 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 120 200 V DS =5V 100 ID , Drain Current (A) ID , Drain Current (A) 160 Limited by package 80 60 40 120 80 T j =150 o C 40 T j =25 o C 20 T j = -55 o C 0 0 25 50 75 100 T C , Case Temperature ( 125 o C) Fig 11. Drain Current v.s. Case Temperature 150 0 2 4 6 8 10 V GS , Gate-to-Source Voltage (V) Fig 12. Transfer Characteristics 4 AP8600S 14 160 T j =25 o C PD, Power Dissipation(W) RDS(ON) (mΩ) 12 10 8 6 V GS =10V 120 80 40 4 0 2 0 20 40 60 80 100 0 120 50 100 150 T C , Case Temperature( o C) I D , Drain Current (A) Fig 13. Typ. Drain-Source on State Resistance Fig 14. Total Power Dissipation 2 I D =1mA Normalized BVDSS 1.6 1.2 . 0.8 0.4 0 -100 -50 T 0 j 50 100 150 , Junction Temperature ( o C) Fig 15. Normalized BVDSS v.s. Junction 5 AP8600S MARKING INFORMATION Part Number 8600 YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence . 6