AP9435GJ

AP9435GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 50mΩ - 20A Description G Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device. The TO-252/TO-251 package is widely used for commercial-industrial application. G D D S TO-252(H) S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating - 30 ±20 - 20 -13 -60 12.5 0.1 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 10 110 Units ℃/W ℃/W Data and specifications subject to change without notice 201017075-1/4 AP9435GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-10A VGS=-4.5V, ID=-5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150oC) Min. -30 -1 - Typ. 10 8 1.6 4.3 6.3 46 20 7.4 570 80 75 Max. Units 50 90 -3 -1 -25 ±100 16 740 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VDS=VGS, ID=-250uA VDS=-10V, ID=-10A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=± 20V ID=-10A VDS=-24V VGS=-4.5V VDS=-15V ID=-10A RG=3.3Ω,VGS=-10V RD=1.5Ω VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-10A, VGS=0V IS=-10A, VGS=0V, dI/dt=-100A/µs Min. - Typ. 18 10 Max. Units -1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4 AP9435GH/J 80 70 T C =25 C 60 o -10V 60 T C =150 C o -10V -8.0V -8.0V -ID , Drain Current (A) 50 -ID , Drain Current (A) -6.0V 40 40 -6.0V 30 -4.5V 20 -4.5V 20 V G =-4.0V V G =-4.0V 10 0 0 2 4 6 8 10 0 0 2 4 6 8 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 90 1.8 I D =-10A T C =25 ℃ 80 1.6 I D =-10A V G =-10V Normalized RDS(ON) RDS(ON) (mΩ) 70 1.4 60 1.2 50 1.0 40 0.8 30 2 4 6 8 10 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 10 8 1.8 -VGS(th) (V) 6 1.6 -IS(A) T j =150 o C 4 T j =25 o C 1.4 2 1.2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP9435GH/J f=1.0MHz 12 1000 -VGS , Gate to Source Voltage (V) 10 I D =-10A V DS =-24V Ciss 8 6 C (pF) 100 Coss Crss 4 2 0 0 4 8 12 16 20 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 10 0.2 -ID(A) 100us 0.1 0.1 0.05 PDM 0.02 1 o T C =25 C Single Pulse 1ms 10ms 100ms DC t T 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.1 0.1 1 10 100 0.01 0.00001 0.0001 0.001 0.01 0.1 1 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 D D1 SYMBOLS Millimeters MIN NOM MAX A2 A3 B1 D D1 E3 1.80 0.40 0.40 6.00 4.80 3.50 2.20 0.5 5.10 0.50 -0.35 2.30 0.50 0.70 6.50 5.35 4.00 2.63 0.85 5.70 1.10 2.30 0.50 2.80 0.60 1.00 7.00 5.90 4.50 3.05 1.20 6.30 1.80 -0.65 E2 E3 E1 F F1 E1 E2 e C B1 F1 F 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e e A2 R : 0.127~0.381 A3 (0.1mm C Part Marking Information & Packing : TO-252 Part Number meet Rohs requirement 9435GH Package Code LOGO YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence ADVANCED POWER ELECTRONICS CORP. D A Millimeters c1 SYMBOLS MIN NOM MAX Original D1 A E2 A1 B1 E1 E B2 Original Original 2.10 0.60 0.40 0.60 0.40 0.40 6.00 4.80 5.00 1.20 ---7.00 2.30 1.20 0.60 0.95 0.50 0.55 6.50 5.40 5.50 1.70 2.30 --- 2.50 1.80 0.80 1.25 0.65 0.70 7.00 5.90 6.00 2.20 ---16.70 c c1 D A1 B2 B1 F D1 E1 E2 e F 1.All Dimensions Are in Millimeters. c 2.Dimension Does Not Include Mold Protrusions. e e Part Marking Information & Packing : TO-251 Part Number 9435GJ meet Rohs requirement Package Code LOGO Date Code (YWWSSS) Y ：Last Digit Of The Year WW ：Week SSS ：Sequence YWWSSS