AP9565BGH

AP9565BGH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS -40V RDS(ON) 52mΩ ID G -17A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. G The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9565BGJ) is available for low-profile applications. D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Parameter Symbol Rating Units VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Drain Current, VGS @ 10V -17 A ID@TC=100℃ Drain Current, VGS @ 10V -11 A -60 A 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 25 W Linear Derating Factor 0.2 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Parameter Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Units 5.0 ℃/W 62.5 ℃/W 110 ℃/W 1 201501273 AP9565BGH/J-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Min. Typ. -40 - - V VGS=-10V, ID=-8A - - 52 mΩ VGS=-4.5V, ID=-6A - - 90 mΩ VGS=0V, ID=-250uA Static Drain-Source On-Resistance 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-8A - 9.6 - S IDSS Drain-Source Leakage Current VDS=-40V, VGS=0V - - -10 uA Drain-Source Leakage Current (T j=125 C) VDS=-32V, VGS=0V - - -250 uA Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=-8A - 7.8 12.5 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-32V - 1.7 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 4.8 - nC 2 td(on) Turn-on Delay Time VDS=-20V - 8 - ns tr Rise Time ID=-8A - 17 - ns td(off) Turn-off Delay Time RG=3.3Ω - 22 - ns tf Fall Time VGS=-10V - 23 - ns Ciss Input Capacitance VGS=0V - 530 850 pF Coss Output Capacitance VDS=-25V - 110 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF Min. Typ. IS=-8A, VGS=0V - - -1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-8A, VGS=0V, - 21 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 14 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9565BGH/J-HF 40 40 30 -ID , Drain Current (A) -ID , Drain Current (A) T C = 25 C -10V -7.0V T C = 150 o C -10V -7.0V o -5.0V -4.5V 20 10 30 -5.0V -4.5V 20 10 V G = -3.0 V V G = -3.0 V 0 0 0 1 2 3 4 5 6 0 -V DS , Drain-to-Source Voltage (V) 1 2 3 4 5 6 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 90 1.8 I D =-8A V G =-10V I D = -6 A o T C =25 C 80 Normalized RDS(ON) RDS(ON) (mΩ ) 1.5 70 60 1.2 0.9 50 0.6 40 2 4 6 8 -50 10 10 1.4 8 1.2 6 o T j =150 C 50 100 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature Normalized VGS(th) -IS(A) Fig 3. On-Resistance v.s. Gate Voltage o 0 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) T j =25 C 4 1 0.8 0.6 2 0.4 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.6 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9565BGH/J-HF f=1.0MHz 10000 V DS = -32V I D = -8A 10 8 1000 C (pF) -VGS , Gate to Source Voltage (V) 12 6 C iss C oss C rss 100 4 2 10 0 0 5 10 15 1 20 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (Rthjc) 1 100us -ID (A) 10 1ms 1 10ms 100ms DC o T C =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 0.1 1 10 100 0.00001 0.0001 -V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 40 V DS =-5V VG -ID , Drain Current (A) 30 T j =25 o C QG T j =150 o C -4.5V QGS 20 QGD 10 Charge Q 0 0 2 4 6 8 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4 AP9565BGH/J-HF MARKING INFORMATION TO-251 9565BGJ Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence TO-252 9565BGH Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 5