AP9575GH-HF

AP9575GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic -60V RDS(ON) 90mΩ ID G ▼ RoHS Compliant & Halogen-Free BVDSS -15A S Description AP9575 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP9575GJ) are available for low-profile applications. G D S TO-252(H) G D S TO-251(J) o Absolute Maximum Ratings@Tj=25 C(unless otherwise specified) Parameter Symbol . Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage +25 V ID@TC=25℃ Drain Current, VGS @ 10V -15 A ID@TC=100℃ Drain Current, VGS @ 10V -9.5 A -45 A 31.3 W 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Parameter Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Units 4.0 ℃/W 62.5 ℃/W 110 ℃/W 1 201410234 AP9575GH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -60 - - V RDS(ON) Static Drain-Source On-Resistance 2 VGS=-10V, ID=-12A - - 90 mΩ VGS=-4.5V, ID=-9A - - 120 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-9A - 14 - S IDSS Drain-Source Leakage Current VDS=-48V, VGS=0V - - -25 uA IGSS Gate-Source Leakage VGS= +25V, VDS=0V - - +100 nA Qg Total Gate Charge ID=-9A - 14 27 nC Qgs Gate-Source Charge VDS=-48V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 8 - nC td(on) Turn-on Delay Time VDS=-30V - 8 - ns tr Rise Time ID=-9A - 17 - ns td(off) Turn-off Delay Time RG=3.3Ω - 36 - ns tf Fall Time VGS=-10V - 41 - ns Ciss Input Capacitance VGS=0V - 1100 2660 pF Coss Output Capacitance VDS=-25V - 115 - pF Crss Reverse Transfer Capacitance - 90 - pF Min. Typ. IS=-9A, VGS=0V - - -1.2 V . f=1.0MHz Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=-9A, VGS=0V, - 38 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 61 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9575GH/J-HF 50 40 -10V -7.0V -5.0V -ID , Drain Current (A) 40 -10V -7.0V -5.0V TC=150oC -ID , Drain Current (A) T C =25 o C -4.5V 30 20 30 -4.5V 20 10 10 V G =-3.0V V G =-3.0V 0 0 0 2 4 6 8 0 10 Fig 1. Typical Output Characteristics 4 6 8 10 12 14 Fig 2. Typical Output Characteristics 100 2.0 I D = -9 A T C =25 ℃ I D = -12 A V G = - 10V 80 . Normalized RDS(ON) 1.8 90 RDS(ON) (mΩ ) 2 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) 70 1.6 1.4 1.2 1.0 0.8 0.6 60 0.4 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 10.0 1.4 Normalized VGS(th) 8.0 -IS(A) 6.0 T j =150 o C 4.0 T j =25 o C 1.2 1.0 0.8 2.0 0.6 0.0 0.4 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9575GH/J-HF f=1.0MHz 10000 I D = -9A V DS = -48V 10 8 1000 C iss 100 C oss C rss C (pF) -VGS , Gate to Source Voltage (V) 12 6 4 2 10 0 0 10 20 30 1 40 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100us 10 -ID (A) 1ms . 10ms 1 100ms DC o T C =25 C Single Pulse 0.1 Normalized Thermal Response (R thjc) 100 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 1 10 100 1000 0.00001 0.0001 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -4.5V QGS QGD 10% VGS td(on) tr td(off)tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP9575GH/J-HF MARKING INFORMATION TO-251 9575GJ Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence TO-252 9575GH Part Number meet Rohs requirement for low voltage MOSFET only . Package Code YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 5 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 Millimeters SYMBOLS D D1 E2 E1 F B2 e MAX A2 2.10 2.30 2.50 A3 0.40 0.50 0.65 B 0.40 0.70 1.00 B1 0.50 0.85 1.20 D 6.00 6.50 6.80 D1 4.80 5.35 5.90 4.00 (ref.) F 2.00 2.63 3.05 F1 0.50 0.85 1.20 E1 5.00 5.70 6.30 E2 0.50 1.10 1.80 e F1 B NOM E3 E3 B1 MIN e 2.3 (ref) C 0.35 0.525 0.70 A1 0.00 － 0.25 B2 － － 1.25 L 0 90 0.90 1 34 1.34 1 78 1.78 . A2 C A1 A3 L 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. 3. Thermal PAD, Body and Pin contour is for reference, it may has little difference by option. Draw No. M1-H3-G-v09 TO-252 TO-252 FOOTPRINT： 6.8mm 7mm 2mm 4.6mm 3mm . 0.6mm ADVANCED POWER ELECTRONICS CORP. 1.0mm Draw No. M1-H3-G-v09 1