AP9579GM

AP9579GM-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D D ▼ Lower Gate Charge D D ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free SO-8 S S G BVDSS -60V RDS(ON) 25mΩ ID -7.3A S D Description AP9579 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G S The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Parameter Symbol Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage +20 V -7.3 A -5.8 A -30 A 2.5 W ID@TA=25℃ ID@TA=70℃ Drain Current, VGS @ 10V 3 Drain Current, VGS @ 10V 3 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Value Unit Maximum Thermal Resistance, Junction-ambient3 50 ℃/W Data and specifications subject to change without notice 1 201501122 AP9579GM-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. -60 - - V VGS=-10V, ID=-7A - 18.2 25 mΩ VGS=-4.5V, ID=-5A - 22.5 30 mΩ VGS=0V, ID=-250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 -1.5 -3 V gfs Forward Transconductance VDS=-10V, ID=-7A - 27 - S IDSS Drain-Source Leakage Current VDS=-48V, VGS=0V - - -25 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=-7A - 40 64 nC Qgs Gate-Source Charge VDS=-30V - 8 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 18 - nC td(on) Turn-on Delay Time VDS=-30V - 12 - ns tr Rise Time ID=-1A - 9 - ns td(off) Turn-off Delay Time RG=3.3Ω - 77 - ns tf Fall Time VGS=-10V - 37 - ns Ciss Input Capacitance VGS=0V - 3700 5920 pF Coss Output Capacitance VDS=-15V - 450 - pF Crss Reverse Transfer Capacitance f=1MHz - 300 - pF Rg Gate Resistance f=1.0MHz - 2.5 5 Ω Min. Typ. IS=-1.9A, VGS=0V - - -1.3 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=-7A, VGS=0V, - 37 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 50 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t