AP9579GS-HF

AP9579GS-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement -60V RDS(ON) 25mΩ ID ▼ Fast Switching Characteristic G ▼ Halogen Free & RoHS Compliant Product BVDSS -45A S Description AP9579 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. G DS TO-263(S) o Absolute Maximum Ratings@Tj=25 C(unless otherwise specified) Parameter Symbol . Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Drain Current, VGS @ 10V -45 A ID@TC=100℃ Drain Current, VGS @ 10V -28.7 A -160 A 89.3 W 3.13 W -55 to 150 o C -55 to 150 o C 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 3 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range Operating Junction Temperature Range TJ Thermal Data Symbol Rthj-c Rthj-a Parameter Value Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice 3 Units 1.4 o C/W 40 o C/W 1 201411252 AP9579GS-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units VGS=0V, ID=-250uA -60 - - V VGS=-10V, ID=-20A - - 25 mΩ VGS=-4.5V, ID=-15A - - 30 mΩ BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance 2 VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-20A - 36 - S IDSS Drain-Source Leakage Current VDS=-48V, VGS=0V - - -25 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=-20A - 45 72 nC Qgs Gate-Source Charge VDS=-48V - 7.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 26 - nC td(on) Turn-on Delay Time VDS=-30V - 12 - ns tr Rise Time ID=-20A - 38 - ns td(off) Turn-off Delay Time RG=3.3Ω - 70 - ns tf Fall Time VGS=-10V - 94 - ns Ciss Input Capacitance VGS=0V - 3600 5760 pF Coss Output Capacitance VDS=-25V - 375 - pF Crss Reverse Transfer Capacitance - 270 - pF Min. Typ. IS=-20A, VGS=0V - - -1.3 V . f=1.0MHz Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=-20A, VGS=0V, - 43 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 63 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9579GS-HF 100 160 -10V -7.0V -6.0V -5.0V -ID , Drain Current (A) 120 -10V -7.0V -6.0V -5.0V V G = -4.0V o T C =150 C 80 -ID , Drain Current (A) o T C = 25 C V G = -4.0V 80 60 40 40 20 0 0 0 4 8 12 16 0 2 Fig 1. Typical Output Characteristics 6 8 10 12 Fig 2. Typical Output Characteristics 25 2.0 I D = - 20 A V G = -10V I D = -15 A 23 21 . Normalized RDS(ON) T C =25 o C RDS(ON) (mΩ) 4 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) 19 1.6 1.2 0.8 17 0.4 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 20 16 Normalized VGS(th) -IS(A) 1.2 12 T j =150 o C T j =25 o C 8 0.8 0.4 4 0.0 0 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9579GS-HF f=1.0MHz 5000 V DS = - 48 V I D = - 20 A 8 4000 C iss C (pF) -VGS , Gate to Source Voltage (V) 10 6 3000 4 2000 2 1000 C oss C rss 0 0 0 20 40 60 1 80 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 10us 100 Operation in this area limited by RDS(ON) -ID (A) 100us . 1ms 10 10ms 100ms DC T c =25 o C Single Pulse Normalized Thermal Response (Rthjc) 1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 0.1 1 10 100 1000 0.00001 0.0001 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG 90% QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP9579GS-HF MARKING INFORMATION 9579GS Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence . 5 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-263 E SYMBOLS E1 D2 D1 D b1 L2 MIN NOM MAX A 4.00 4.75 5.20 A1 0.00 0.15 0.30 b 0.50 0.90 1.10 b1 1.07 1.27 1.47 c 0.30 0.55 0.80 c1 1.10 1.40 1.70 D 8.30 9.05 9.80 D1 5.10(ref) D2 1.27(ref) E L3 Millimeters 9.50 e e 10.70 7.00～9.00(ref) E1 b 10.10 2.04 2.54 L1 2.54(ref) L2 1.5 (ref) 3.04 L3 3.50 4.50 5.50 θ 0° ----- 8° . A A c c1 c1 θ A1 A1 L1 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Draw No. M1-S3-G-v04 TO-263 TO-263 FOOTPRINT： 10.5mm 10.5mm 2 mm 1.2mm 4mm . Pin1 2.54mm ADVANCED POWER ELECTRONICS CORP. 2.54mm Draw No. M1-S3-G-v04 1