AP95T07GP-HF

AP95T07GP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS 75V RDS(ON) 5mΩ ID G 80A S Description AP95T07 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercialindustrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. G D TO-220(P) S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol . Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage 3 Rating Units 75 V +20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 80 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 70 A 320 A 300 W 2 W/℃ 450 mJ 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation Linear Derating Factor 4 EAS Single Pulse Avalanche Energy TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Units 0.5 ℃/W 62 ℃/W 1 201408253 AP95T07GP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage 2 Min. Typ. Max. Units VGS=0V, ID=1mA 75 - - V VGS=10V, ID=60A - - 5 mΩ RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=60A - 88 - S IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=80A - 85 135 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=40V - 25 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 36 - nC VDS=40V - 22 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=80A - 160 - ns td(off) Turn-off Delay Time RG=3.3Ω - 38 - ns tf Fall Time VGS=10V - 165 - ns Ciss Input Capacitance VGS=0V - 4290 6870 pF Coss Output Capacitance VDS=25V - 985 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 390 - pF Rg Gate Resistance f=1.0MHz - 1.2 2.4 Ω Min. Typ. IS=60A, VGS=0V - - 1.3 V IS=40A, VGS=0V - 75 - ns dI/dt=100A/µs - 190 - nC . Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 80A, calculated continuous current based on maximum allowable junction temperature is 169A. 4.Starting Tj=25oC , L=1mH , IAS=30A. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP95T07GP-HF 250 120 10 V 9.0 V 8.0 V 7.0 V ID , Drain Current (A) 200 10V 9.0V 8.0V 7.0V V G = 6.0 V T C = 1 75 o C 100 ID , Drain Current (A) o T C = 25 C 150 100 V G = 6.0 V 80 60 40 50 20 0 0 0 1 2 3 0 4 Fig 1. Typical Output Characteristics 2 3 Fig 2. Typical Output Characteristics 12 2.4 I D =30A I D =60A V G =10V T C =25 o C 8 . Normalized RDS(ON) 2.0 10 RDS(ON) (mΩ) 1 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) 1.6 1.2 6 0.8 4 0.4 4 5 6 7 8 9 10 -50 0 50 100 150 200 T j , Junction Temperature ( o C) V GS Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 60 50 1.2 o T j =25 C Normalized VGS(th) T j =175 C 40 IS(A) o 30 20 1 0.8 0.6 10 0.4 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 200 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP95T07GP-HF f=1.0MHz 14 10000 C iss V DS = 40 V V DS = 48 V V DS = 64 V 10 C (pF) VGS , Gate to Source Voltage (V) I D = 80 A 12 8 1000 C oss 6 C rss 4 2 0 100 0 20 40 60 80 100 120 1 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 100us ID (A) 100 1ms . 10ms 10 100ms DC o T c =25 C Single Pulse Normalized Thermal Response (Rthjc) 1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP95T07GP-HF MARKING INFORMATION 95T07GP Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence . 5