AP9963GP

AP9963GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Low Gate Charge ▼ Fast Switching Characteristic BVDSS 40V RDS(ON) 4mΩ ID G 80A S Description The Advanced Advanced Power Power MOSFETs MOSFETs fromfrom APEC APEC provide provide the the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial power applications and suited for low voltage applications such as DC/DC converters. G TO-220(P) D S Absolute Maximum Ratings Symbol Rating Units Drain-Source Voltage 40 V VGS Gate-Source Voltage +20 V ID@Tc=25℃ Continuous Drain Current, VGS @ 10V3 80 A ID@Tc=100℃ Continuous Drain Current, VGS @ 10V 78 A VDS Parameter 1 IDM Pulsed Drain Current PD@Tc=25℃ Total Power Dissipation TSTG TJ 300 A 104 W Storage Temperature Range -55 to 150 ℃ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 1.2 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W Data and specifications subject to change without notice 1 200901051 AP9963GP Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=250uA 40 - - V VGS=10V, ID=40A - - 4 mΩ VGS=4.5V, ID=30A - - 5 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=30A - 80 - S IDSS Drain-Source Leakage Current VDS=40V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=30A - 28.5 45 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=32V - 5.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 17 - nC VDS=20V - 11 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=30A - 65 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 35 - ns tf Fall Time RD=0.66Ω - 95 - ns Ciss Input Capacitance VGS=0V - 2800 4500 pF Coss Output Capacitance VDS=25V - 625 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 200 - pF Rg Gate Resistance f=1.0MHz - 1.6 2.4 Ω Min. Typ. Source-Drain Diode Symbol Parameter 2 VSD Forward On Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 2 Test Conditions Max. Units IS=40A, VGS=0V - - 1.2 V IS=10A, VGS=0V, - 42 - ns dI/dt=100A/µs - 50 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 80A, calculated continuous current based on maximum allowable junction temperature is 124A. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9963GP 300 240 o T C =25 C 200 200 ID , Drain Current (A) ID , Drain Current (A) 250 10V 7.0V 6.0V 5.0V T C =150 o C 10V 7.0V 6.0V 5.0V V G = 4. 0V 150 100 50 160 V G =4.0V 120 80 40 0 0 0.0 1.0 2.0 3.0 4.0 0.0 V DS , Drain-to-Source Voltage (V) 2.0 4.0 6.0 8.0 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 5 I D =40A V G =10V I D =30A T C =25 ℃ Normalized RDS(ON) RDS(ON) (mΩ) 4 4 3 1.4 0.8 3 0.2 3 2 4 6 8 -50 10 50 100 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature 40 1.6 30 1.2 Normalized VGS(th) (V) IS(A) Fig 3. On-Resistance v.s. Gate Voltage o T j =150 C 0 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) T j =25 o C 20 0.8 0.4 10 0.0 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9963GP f=1.0MHz 4000 12 9 3000 V DS =20V V DS =24V V DS =32V C iss C (pF) VGS , Gate to Source Voltage (V) I D =30A 6 2000 1000 3 C oss C rss 0 0 0 10 20 30 40 50 1 60 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 1000 100 ID (A) 100us 1ms 10 10ms 100ms DC T C =25 o C Single Pulse 1 Normalized Thermal Response (Rthjc) Duty factor = 0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty Factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 1 10 100 0.00001 0.0001 Fig 9. Maximum Safe Operating Area VDS 90% 0.001 0.01 0.1 1 t , Pulse Width (s) V DS ,Drain-to-Source Voltage (V) Fig 10. Effective Transient Thermal Impedance VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E1 A E Millimeters SYMBOLS φ L2 L5 c1 D L4 b1 L3 MIN NOM MAX A 4.25 4.48 4.70 b b1 c c1 0.65 0.80 0.90 1.15 1.38 1.60 0.40 0.50 0.60 1.00 1.20 1.40 E 9.70 10.00 10.40 E1 --- --- 11.50 e ---- 2.54 ---- L 12.70 13.60 14.50 L1 2.60 2.80 3.00 L2 1.00 1.40 1.80 L3 2.60 3.10 3.60 L4 14.70 15.50 16.00 L1 L c b L5 6.30 6.50 6.70 φ 3.50 3.70 3.90 D 8.40 8.90 9.40 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-220 Part Number meet Rohs requirement for low voltage MOSFET only Package Code 9963GP LOGO YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 5