AP9972GR
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Single Drive Requirement ▼ Surface Mount Package G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
60V 18mΩ 60A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S
TO-262(R)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 60 ±25 60 38 230 89 0.7 30 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ A ℃ ℃
Total Power Dissipation Linear Derating Factor Avalanche Current
3
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.4 62 Units ℃/W ℃/W
Data and specifications subject to change without notice
200218051
AP9972GR
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Test Conditions VGS=0V, ID=250uA
Min. 60 1 -
Typ. 0.06 55 32 8 20 11 58 45 80 280 230 1.7
Max. Units 18 22 3 10 25 ±100 51 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
VGS=10V, ID=35A VGS=4.5V, ID=25A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
VDS=VGS, ID=250uA VDS=10V, ID=35A VDS=60V, VGS=0V VDS=48V ,VGS=0V VGS=±25V ID=35A VDS=48V VGS=4.5V VDS=30V ID=35A RG=3.3Ω,VGS=10V RD=0.86Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
3170 5070
Source-Drain Diode
Symbol VSD Parameter Forward On Voltage
2
Test Conditions IS=35A, VGS=0V IS=35A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 50 48
Max. Units 1.2 V ns nC
trr
Qrr
Reverse Recovery Time Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse width
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