AP9977GH

AP9977GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 60V ▼ Simple Drive Requirement RDS(ON) 100mΩ ▼ Surface Mount Package ID ▼ Low Gate Charge D 11A G ▼ RoHS Compliant S Description AP9977 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP9977GJ) are available for low-profile applications. G G D D S S TO-252(H) TO-251(J) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +25 V ID@TC=25℃ Drain Current, VGS @ 10V 11 A ID@TC=100℃ Drain Current, VGS @ 10V 6.8 A 45 A 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 21 W Linear Derating Factor 0.17 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Parameter Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Units 6 ℃/W 62.5 ℃/W 110 ℃/W 1 201501265 AP9977GH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions VGS=0V, ID=250uA Min. Typ. Max. Units 60 - - V BVDSS Drain-Source Breakdown Voltage ∆BVDSS/∆Tj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.04 - V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=5A - - 100 mΩ VGS=4.5V, ID=4A - - 125 mΩ V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 gfs Forward Transconductance VDS=10V, ID=5A - 7 - S IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 10 uA Drain-Source Leakage Current (T j=125 C) VDS=48V ,VGS=0V - - 250 uA Gate-Source Leakage VGS=+25V, VDS=0V - - +100 nA ID=5A - 6 10 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3 - nC 2 td(on) Turn-on Delay Time VDS=30V - 6 - ns tr Rise Time ID=5A - 11 - ns td(off) Turn-off Delay Time RG=3.3Ω - 14 - ns tf Fall Time VGS=10V - 2 - ns Ciss Input Capacitance VGS=0V - 485 780 pF Coss Output Capacitance VDS=25V - 55 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 40 - pF Min. Typ. IS=5A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=5A, VGS=0V, - 23 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 28 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9977GH/J-HF 25 25 10V 7.0V 5.0V 4.5V T C =25 C ID , Drain Current (A) 20 15 10 V G =3.0V 5 10V 7.0V o T C = 150 C 20 ID , Drain Current (A) o 5.0V 4.5V 15 10 V G =3.0V 5 0 0 0 2 4 6 8 0 2 4 6 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 105 2.0 I D =5A V G =10V ID=4A o T C =25 C Normalized RDS(ON) 1.6 RDS(ON) (mΩ) 95 85 1.2 0.8 0.4 75 2 4 6 8 -50 10 0 50 100 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 150 o 1.5 6 Normalized VGS(th) 5 IS(A) 4 3 T j =150 o C T j =25 o C 2 1.1 0.7 1 0.3 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9977GH/J-HF 10 f=1.0MHz 1000 C iss V DS = 30 V V DS = 38 V V DS = 48 V 6 C (pF) VGS , Gate to Source Voltage (V) ID=5A 8 100 4 C oss C rss 2 10 0 0 4 8 1 12 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (Rthjc) 1 100us ID (A) 10 1ms 10ms 100ms DC 1 T C =25 o C Single Pulse 0.1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP9977GH/J-HF MARKING INFORMATION TO-251 9977GJ Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence TO-252 9977GH Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 5