AP9990GH-HF

AP9990GH-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristic 60V RDS(ON) 6mΩ ID G ▼ RoHS Compliant & Halogen-Free BVDSS 3 100A S Description AP9990 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. G D S TO-252(H) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Continuous Drain Current (Chip) 100 A 75 A 70 A 300 A ID@TC=25℃ Drain Current, VGS @ 10V ID@TC=100℃ Drain Current, VGS @ 10V 3 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 125 W PD@TA=25℃ Total Power Dissipation 2.4 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice 4 Value Units 1.2 ℃/W 62.5 ℃/W 1 201501262 AP9990GH-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage 2 Min. Typ. Max. Units VGS=0V, ID=250uA 60 - - V VGS=10V, ID=40A - - 6 mΩ RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance VDS=10V, ID=40A - 55 - S IDSS Drain-Source Leakage Current VDS=48V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=40A - 59 94 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 14 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 30 - nC 2 td(on) Turn-on Delay Time VDS=30V - 14 - ns tr Rise Time ID=40A - 76 - ns td(off) Turn-off Delay Time RG=1Ω - 25 - ns tf Fall Time VGS=10V - 12 - ns Ciss Input Capacitance VGS=0V - 2320 3700 pF Coss Output Capacitance VDS=25V - 450 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 280 - pF Rg Gate Resistance f=1.0MHz - 1.3 2.6 Ω Min. Typ. IS=40A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=10A, VGS=0V, - 45 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 70 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 75A. 2 4.Surface mounted on 1 in copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9990GH-HF 300 160 ID , Drain Current (A) 250 ID , Drain Current (A) T C =175 o C 10V 9.0V 8.0V o T C =25 C 200 7.0V 150 V G = 6.0V 100 10V 9.0V 8.0V 7.0V 120 V G =6.0V 80 40 50 0 0 0.0 4.0 8.0 12.0 16.0 20.0 24.0 0.0 4.0 V DS , Drain-to-Source Voltage (V) 8.0 12.0 16.0 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 2.4 I D =40A V G =10V Normalized RDS(ON) 2.0 Normalized BVDSS 1.1 1 1.6 1.2 0.9 0.8 0.4 0.8 -50 0 50 100 150 -50 200 0 Fig 3. Normalized BVDSS v.s. Junction 100 150 200 Fig 4. Normalized On-Resistance v.s. Junction Temperature Temperature 40 1.6 30 1.2 T j =175 o C Normalized VGS(th) IS(A) 50 T j , Junction Temperature ( o C) T j , Junction Temperature ( o C) T j =25 o C 20 10 0.8 0.4 0 0.0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 200 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9990GH-HF f=1.0MHz 12 4000 I D =40A 3000 V DS =30V V DS =36V V DS =48V 8 C (pF) VGS , Gate to Source Voltage (V) 10 6 C iss 2000 4 1000 2 C oss C rss 0 0 0 20 40 60 80 1 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthjc) 1000 Operation in this area limited by RDS(ON) ID (A) 100 100us 1ms 10 10ms 100ms DC T C =25 o C Single Pulse Duty factor = 0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty Factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 0.1 1 10 100 1000 0.00001 0.0001 V DS ,Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP9990GH-HF MARKING INFORMATION 9990GH Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 5 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 Millimeters SYMBOLS D D1 E2 E1 F B2 e MAX A2 2.10 2.30 2.50 A3 0.40 0.50 0.65 B 0.40 0.70 1.00 B1 0.50 0.85 1.20 D 6.00 6.50 6.80 D1 4.80 5.35 5.90 4.00 (ref.) F 2.00 2.63 3.05 F1 0.50 0.85 1.20 E1 5.00 5.70 6.30 E2 0.50 1.10 1.80 e F1 B NOM E3 E3 B1 MIN e 2.3 (ref) C 0.35 0.525 0.70 A1 0.00 － 0.25 B2 － － 1.25 L 0 90 0.90 1 34 1.34 1 78 1.78 . A2 C A1 A3 L 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. 3. Thermal PAD, Body and Pin contour is for reference, it may has little difference by option. Draw No. M1-H3-G-v09 TO-252 TO-252 FOOTPRINT： 6.8mm 7mm 2mm 4.6mm 3mm . 0.6mm ADVANCED POWER ELECTRONICS CORP. 1.0mm Draw No. M1-H3-G-v09 1