AP9990GP

AP9990GP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic G ▼ RoHS Compliant & Halogen-Free BVDSS 60V RDS(ON) 6mΩ ID 100A S Description AP9990 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-220 package is widely preferred for all commercialindustrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. G TO-220(P) D S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Drain Current (Chip) 100 A 80 A 70 A 300 A 125 W ID@Tc=25℃ Drain Current, VGS @ 10V ID@Tc=100℃ Drain Current, VGS @ 10V 3 1 IDM Pulsed Drain Current PD@Tc=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 1.2 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W Data and specifications subject to change without notice 1 201501142 AP9990GP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=40A - - 6 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance VDS=10V, ID=40A - 55 - S IDSS Drain-Source Leakage Current VDS=48V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=40A - 59 94 nC Qgs Gate-Source Charge VDS=48V - 14 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 29.5 - nC td(on) Turn-on Delay Time VDS=30V - 14 - ns tr Rise Time ID=40A - 76 - ns td(off) Turn-off Delay Time RG=1Ω,VGS=10V - 25 - ns tf Fall Time RD=0.75Ω - 12 - ns Ciss Input Capacitance VGS=0V - 2320 3700 pF Coss Output Capacitance VDS=25V - 450 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 280 - pF Rg Gate Resistance f=1.0MHz - 1.3 - Ω Min. Typ. IS=40A, VGS=0V - - 1.3 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=10A, VGS=0V, - 41 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 58 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Package limitation current is 80A. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9990GP-HF 160 300 ID , Drain Current (A) 250 ID , Drain Current (A) T C =175 o C 10V 9.0V 8.0V o T C =25 C 200 7.0V 150 V G = 6.0V 100 10V 9.0V 8.0V 7.0V 120 V G =6.0V 80 40 50 0 0 0.0 4.0 8.0 12.0 16.0 20.0 24.0 0.0 4.0 V DS , Drain-to-Source Voltage (V) 8.0 12.0 16.0 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 2.4 I D =40A V G =10V Normalized RDS(ON) 2.0 Normalized BVDSS 1.1 1 1.6 1.2 0.9 0.8 0.4 0.8 -50 0 50 100 150 -50 200 0 Fig 3. Normalized BVDSS v.s. Junction 100 150 200 Fig 4. Normalized On-Resistance v.s. Junction Temperature Temperature 40 1.6 30 1.2 T j =175 o C Normalized VGS(th) IS(A) 50 T j , Junction Temperature ( o C) T j , Junction Temperature ( o C) o T j =25 C 20 10 0.8 0.4 0 0.0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 200 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9990GP-HF f=1.0MHz 12 4000 I D =40A 3000 V DS =30V V DS =36V V DS =48V 8 C (pF) VGS , Gate to Source Voltage (V) 10 6 C iss 2000 4 1000 2 C oss C rss 0 0 0 20 40 60 80 1 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 1000 Normalized Thermal Response (R thjc) Duty factor = 0.5 Operation in this area limited by RDS(ON) 100 ID (A) 100us 1ms 10 10ms 100ms DC T C =25 o C Single Pulse 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty Factor = t/T Peak Tj = PDM x Rthjc + TC Single Pulse 0.01 1 0.1 1 10 100 1000 0.00001 0.0001 V DS ,Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 90% 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 AP9990GP-HF MARKING INFORMATION 9990GP Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 5 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E2 E E1 Note 3 φ A MIN NOM MAX A 4.20 4.50 4.80 b b1 c c1 0.60 0.80 1.00 1.10 1.38 1.80 0.30 0.48 0.65 1.10 1.30 1.50 E 9.70 10.00 10.40 E1 7.40 8.30 9.20 L1 L5 L2 c1 L4 Note 3 Millimeters SYMBOLS D e b1 G L3 F Note 3 . L b c 2.54 (ref.) L 12.70 13.60 14.50 L1 2.50 2.75 3.00 L2 1.00 1.40 1.80 L3 2.60 3.35 4.10 L4 14.30 15.15 16.00 L5 6.00 6.40 6.80 φ 3.40 3.70 4.00 D 8.30 8.85 9.40 F 1.20 1.41 1.85 G 2.20 2.60 3.00 E2 － － 11.50 e Note: 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. 3. Thermal PAD and Pin contour is for reference, it may has little difference by option. Draw No. M1-P3-G-v10 TO-220 TO-220 FOOTPRINT： 2.54mm 2.54mm 1.7mm . 1.1mm ADVANCED POWER ELECTRONICS CORP. Draw No. M1-P3-G-v10 1