AP9997GK

AP9997GK RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic D SOT-223 G D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) S 100V 120mΩ 3.2A ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 100 +20 3.2 2.6 20 2.8 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Value 45 Unit ℃/W Data and specifications subject to change without notice 1 201006153 AP9997GK Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=3A VGS=4.5V, ID=2A Min. 100 1 - Typ. 3 14 1.5 5.5 4.5 7 18 6 450 65 50 Max. Units 120 200 3 25 100 ±100 22 720 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=70 C) o VDS=VGS, ID=250uA VDS=10V, ID=3A VDS=80V, VGS=0V VDS=80V ,VGS=0V VGS= +20V, VDS=0V ID=3A VDS=80V VGS=10V VDS=50V ID=1A RG=3.3Ω,VGS=10V RD=50Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=1.5A, VGS=0V IS=3A, VGS=0V, dI/dt=100A/µs Min. - Typ. 39 62 Max. Units 1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in copper pad of FR4 board, t