AP9T16AGH-HF

AP9T16AGH-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Capable of 2.5V Gate Drive ▼ Fast Switching Characteristic G ▼ RoHS Compliant & Halogen-Free BVDSS 20V RDS(ON) 20mΩ ID 19.5A S Description AP9T16A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. G D S TO-252(H) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage +12 V ID@TC=25℃ Drain Current, VGS @ 4.5V 19.5 A ID@TC=100℃ Drain Current, VGS @ 4.5V 12.3 A 80 A 12.5 W 2 W 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 3 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) Data and specifications subject to change without notice 3 Value Units 10 ℃/W 62.5 ℃/W 1 201501162 AP9T16AGH-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=250uA 20 - - V VGS=4.5V, ID=12A - - 20 mΩ VGS=2.5V, ID=10A - - 30 mΩ 0.3 - 1.2 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=5V, ID=12A - 29 - S IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+12V, VDS=0V - - +100 nA Qg Total Gate Charge ID=12A - 16 25.6 nC Qgs Gate-Source Charge VDS=16V - 2.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6 - nC td(on) Turn-on Delay Time VDS=10V - 10 - ns tr Rise Time ID=12A - 50 - ns td(off) Turn-off Delay Time RG=3.3Ω - 24 - ns tf Fall Time VGS=5V - 8 - ns Ciss Input Capacitance VGS=0V - 1300 2080 pF Coss Output Capacitance VDS=20V - 130 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 115 - pF Rg Gate Resistance f=1.0MHz 0.65 1.3 2.6 Ω Min. Typ. IS=12A, VGS=0V - - 1.2 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=10A, VGS=0V, - 22 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 13 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9T16AGH-HF 100 80 ID , Drain Current (A) 80 ID , Drain Current (A) T C =25 C 5.0V 4.5V 3.5V o T C = 150 C 5.0V 4.5V 3.5V o 60 2.5V 40 V G =2.0V 60 2.5V 40 V G =2.0V 20 20 0 0 0 2 4 6 8 10 0 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 4 6 8 Fig 2. Typical Output Characteristics 2.0 24 I D =12A V G =4.5V I D =10A T C =25 ℃ 1.6 Normalized RDS(ON) 20 RDS(ON) (mΩ ) 2 V DS , Drain-to-Source Voltage (V) 16 1.2 0.8 12 0.4 8 0 2 4 6 -50 8 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 20 1.8 I D =250uA T j =150 o C 12 Normalized VGS(th) IS(A) 16 T j =25 o C 8 1.2 0.6 4 0.0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9T16AGH-HF f=1.0MHz 1600 I D = 12 A V DS =16V C iss 6 1200 C (pF) VGS , Gate to Source Voltage (V) 8 4 800 2 400 C oss C rss 0 0 0 8 16 24 32 1 5 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 13 17 21 25 Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (R thjc) 1000 100 10us Operation in this area limited by RDS(ON) ID (A) 9 V DS , Drain-to-Source Voltage (V) 100us 10 1ms 10ms 100ms DC 1 o T C =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T Duty factor = t/T Peak Tj = PDM x Rthjc + TC Single Pulse 0.01 0.1 0.1 1 10 0.00001 100 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 50 24 V DS =5V 20 ID , Drain Current (A) ID , Drain Current (A) 40 30 20 16 12 8 T j =150 o C 10 4 T j =25 o C o T j =-40 C 0 0 0 1 2 3 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics 4 25 50 75 100 125 150 o T C , Case Temperature ( C ) Fig 12. Drain Current v.s. Case Temperature 4 AP9T16AGH-HF MARKING INFORMATION 9T16AGH Part Number meet Rohs requirement for low voltage MOSFET only Package Code YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence 5