AP9T18GH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Capable of 2.5V Gate Drive
▼ Fast Switching Characteristic
20V
RDS(ON)
14mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
38A
S
Description
AP9T18 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance.
G D
S
TO-252(H)
o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Symbol
Parameter
.
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
+16
V
ID@TC=25℃
Drain Current, VGS @ 4.5V
38
A
ID@TC=100℃
Drain Current, VGS @ 4.5V
24
A
140
A
31.3
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data and specifications subject to change without notice
3
Value
Units
4
℃/W
62.5
℃/W
1
201409014
AP9T18GH-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
20
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=4.5V, ID=18A
-
-
14
mΩ
VGS=2.5V, ID=9A
-
-
28
mΩ
0.5
-
1.5
V
-
33
-
S
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=5V, ID=18A
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=16V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+16V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=18A
-
16
25
nC
Qgs
Gate-Source Charge
VDS=16V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9
-
nC
td(on)
Turn-on Delay Time
VDS=10V
-
12
-
ns
tr
Rise Time
ID=18A
-
80
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
22
-
ns
tf
Fall Time
VGS=5V
-
12
-
ns
Ciss
Input Capacitance
VGS=0V
-
1115 1790
pF
Coss
Output Capacitance
VDS=20V
Crss
Rg
-
280
-
pF
Reverse Transfer Capacitance
.
f=1.0MHz
-
220
-
pF
Gate Resistance
f=1.0MHz
-
1.5
-
Ω
Min.
Typ.
IS=18A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=18A, VGS=0V,
-
19
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
11
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9T18GH-HF
90
120
o
o
5.0V
4.5V
T C =25 C
100
5.0V
4.5V
TC=150 C
80
ID , Drain Current (A)
ID , Drain Current (A)
70
80
3.5V
60
40
2.5V
60
3.5V
50
40
30
2.5V
20
20
V G =1.5V
10
V G =1.5V
0
0
0
1
2
3
0
4
1
2
3
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
26
1.6
I D =18A
V G =4.5V
I D =9A
o
T C =25 C
1.4
18
.
Normalized RDS(ON)
RDS(ON) (mΩ)
22
1.2
1.0
14
0.8
10
0.6
0
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
10
8
Normalized VGS(th)
IS(A)
1.5
6
T j =25 o C
o
T j =150 C
4
1
0.5
2
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9T18GH-HF
f=1.0MHz
10000
10
V DS =10V
V DS =12V
V DS =16V
6
C (pF)
VGS , Gate to Source Voltage (V)
I D =18A
8
C iss
1000
4
C oss
C rss
2
100
0
0
5
10
15
20
25
30
1
35
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
ID (A)
Operation in this
area limited by
RDS(ON)
100us
.
1ms
10
10ms
100ms
DC
o
T C =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP9T18GH-HF
MARKING INFORMATION
9T18GH
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
.
5
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